Abstract:ZnO and ZnO thin films doped with different Mg contents (0.81at%,2.43at% and 4.05at%) were fabricated by radio frequency-magnetron sputtering (RF-MS) on glass substrates at 450 °C. The microstructure, photoluminescence (PL), optical and electrical properties were investigated. The results show that ZnO and diluted Mg doped ZnO thin films present a hexagonal wurtzite structure with high crystal quality. In the short wavelength side of near band emission (NBE), a high energy emission band for 0.81at% and 2.43at% Mg doped thin films occurs together with NBE. The increasingly high energy band peak gradually covers the NBE peak with Mg doping increasing to 4.05at%. It is suggested that the energy of the electrons near the substituted Mg2+ increases, and these electrons occupy a higher energy level. However, the energy gap between conduction band and valance band still exists because the electrons energy near the un-substituted Zn2+ does not change. With the increasing doped Mg content, electrons in the higher energy level increase and predominate. Therefore, the reason for the increase in the band gap of Mg doped ZnO thin films can be attributed to the increase in the energy of electrons after Mg doping, together with the Burstein-Moss effect. Incidentally, all films exhibit a high average optical transmission (≥85%). The optical band gap of Mg doped ZnO thin films increases with the increasing Mg doping content and changes from 3.36 to 3.52 eV. The resistivity of the Mg doped films are 2.2×10-3, 3.4×10-3 and 8.1×10-3 Ω·cm for 0.81at%, 2.43at% and 4.05at% Mg contents, respectively.

In–N Codoped P-Type ZnMgO Thin Films with Bandgap Engineering

Formation of p-type ZnMgO thin films by In–N codoping method

Preparation and Characterization of Mg-doped ZnO Thin Films by Sol–gel Method

Carrier Concentration Induced Band-Gap Shift in Al-doped Zn1−xMgxO Thin Films

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Fabrication and Properties of P-Type K Doped Zn1−Mg O Thin Film

Photoluminescence of diluted Mg doped ZnO thin films and band-gap change mechanisms

The Fabrication of Na Doped P -Type Zn 1− X Mg X O Films by Pulsed Laser Deposition

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

P-Type Behavior in In–N Codoped ZnO Thin Films

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Preparation and Characterization of N Doped P-type MgZnO Film

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Effect of Mg Content on Structural, Electrical, and Optical Properties of Li-doped Zn1−xMgxO Thin Films

Growth of Al–N codoped p-type ZnMgO thin films on different substrates

Fabrication of P-Type ZnMgO Films Via Pulsed Laser Deposition Method by Using Li As Dopant Source

Synthesis and Characterization of Al-N Codoped Zn_(1-x)Mg_xO Thin Films

Preparation of P-Type ZnO Films by Al+N-codoping Method

Preparation and Characterization of Nitrogen-doped P-type MgxZn1-xO Film

Preparation and Properties of P-Type Ag-doped ZnMgO Thin Films by Pulsed Laser Deposition