Abstract:Interfacial properties and energy-band alignment of annealed AlN dielectric films on Si-face 4° off-axis 4H–SiC substrates were characterized and demonstrated by x-ray photoelectron spectroscopy (XPS) and current-electric field (I–E) measurements. The XPS results reveal that the Al–O bonds and the silicon suboxides can convert into more stable Al–N bonds and Al–O–Si bonds at the AlN/4H–SiC interface under 1000 °C annealing. The variations in both oxygen-rich composition and the crystallinity in AlN make annealing-dependent conduction band offsets of as-deposited and annealed AlN/4H–SiC to be 1.36 eV and 1.20 eV, respectively. Meanwhile, I–E measurements separately yield the occurrence of the Fowler–Nordheim (FN) tunneling and space-charge-limited conduction in as-deposited and annealed metal-insulator-semiconductor capacitors, corresponding to lower barrier heights of 0.92 eV and 0.54 eV, respectively. The reason for the energy-band shift between I–E derivations and the XPS results was analyzed and demonstrated together. These results can provide considerable insight into the energy-band alignment of AlN as gate dielectric or passivation layers on 4H–SiC based devices.

Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich $\Hbox{al}_{2}\hbox{o}_{3}/p\hbox{-Si}$ Diodes

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Charging-Induced Changes in Reverse Current–Voltage Characteristics of Al/Al-Rich <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}/\hbox{p-Si}$</tex></formula> Diodes

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

Annealing Modulated Microstructural and Electrical Properties of Plasma-Enhanced Atomic Layer Deposition-Derived HfO2/SiO2 Nanolaminates on AlGaN/GaN

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Effect of Annealing on Structure and Electrical Properties of TiO2 Thin Films

Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes

Temperature-Dependent Charge Transport in Al/Al Nanocrystal Embedded Al2o3 Nanocomposite/P-Si Diodes

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure

Impact of in Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors

Annealing Process Influence And Dopant-Silicide Interaction In Self-Aligned Nisi Technology

Role of Interface Reaction at High Temperature in Electrical Characteristics of Bi[sub 3.25]la[sub 0.75]ti[sub 3]o[sub 12]/al[sub 2]o[sub 3]/si Capacitors

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Effect of annealing temperature on the physical properties of NiO thin films and ITO/NiO/Al Schottky diodes