Abstract:PtSi/strained Si1-xGex (x = 0, 0.2 and 0.25) Schottky barrier diodes (SBD) with extended cutoff wavelengths have been demonstrated using by combining pulsed laser deposition (PLD) and molecular beam epitaxy (MBE). Pt was deposited by PLD on the Si1-xGex alloys with a thin Si sacrificial cap layer fabricated by MBE. By the reaction of deposited Pt film on Si sacrificial cap layer silicide SBD have been fabricated. Auger electron depth profiling was performed on the films before and after in vacuo annealing to study the redistribution of composition in the reactions. High-resolution transmission electron microscopy (HREM) was used to investigate the interface structure. We have found that Pt react mainly with Si to form silicides at 350 , leaving some Ge to segregate at the surface. While, with the annealing at 600 for 3min the interface of PtSi/Si1-xGex is smooth, and its electrical characterization is prior. Since lowered-barrier-height silicide SBD are desirable for obtaining longer cutoff-wave-length Si-based infrared detectors, the Schottky barrier heights (SBH) of the PtSi/strained Si1-xGex SBDs with smooth interfaces were substantially lower than those of PtSi/Si SBDs, i.e. decreased with increasing Ge fraction, allowing for tuning of the SBDs cutoff wavelength. The SBH of PtSi/Si1-xGex/Si has been found to vary between 0.12-0.58 eV in the temperature range 77-293 K. At 293 K, the ideality factor has been found to be 2.00 and 1.32 for PtSi/Si0.80Ge0.20and PtSi/Si0.75Ge0.25 diodes, respectively. We have shown that high quantum efficiency and near-ideal dark current can be obtained in the film of PtSi/strained Si1-xGex with excellent interface fabricated by MBE and PLD, furthermore annealing at 600 for 3min.

Effects of annealing processing on morphological, compositional and Schottky characterization of PtSi/Si diodes

Topographical, compositional and schottky characterization of PtSi/Si schottky diodes

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effect of Annealing Temperature on the Formation of Silicides and the Surface Morphologies of PtSi Films

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Preparation of platinum silicide films by pulsed laser deposition and pulsed laser annealing

AFM Studies of Platinum Silicide Thin Films on Silicon Grown by Pulsed Laser Deposition

Platinum Silicide Formation During Pulsed Laser Annealing Prepared By Pulsed Laser Deposition

Formation of Continuous Nanometer PtSi Thin Film on Si by Pulsed Laser Deposition (PLD)

Effect of Deposition and Treatment Conditions on Growth of Nanometer Ptsi Heterostructure

Effect of Annealing on Structure and Electrical Properties of TiO2 Thin Films

Effect of Annealing on SiC Thin Films Prepared by Pulsed Laser Deposition

Carbon and Silicon Related Surface Compounds of Palladium Ultrathin Films on SiC after Different Annealing Temperatures

The effects of annealing disposition on α-SiC thin films prepared by pulsed laser deposition

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Interfacial composition and electrical properties of PtSi/Si1−xGex/Si diodes by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD)

Struture of PtSi/p-Si nanometer films prepared by sputtering

The Dependence of Electrical Characterization on Interface Structure of PtSi / strained-Si 1 − x Ge x / Si Schottky Diodes

Ultrathin Ni(Pt)Si Film Formation Induced by Laser Annealing

Enhanced Effects of Pt Layer on Thermal Stability of NiSi Thin Film by Solid Phase Reaction of Ni/Si(100) System

Annealing effect on SiNx/SiO2 superlattice with ultrathin sublayer fabricated using plasma-enhanced atomic layer deposition