The Dependence of Electrical Characterization on Interface Structure of PtSi / strained-Si 1 − x Ge x / Si Schottky Diodes

Meicheng Li,Xihe Zhen,Liancheng Zhao,Xuekang Chen

2003-01-01

Abstract:PtSi/strained Si1-xGex (x = 0, 0.2 and 0.25) Schottky barrier diodes (SBD) with extended cutoff wavelengths have been demonstrated using by combining pulsed laser deposition (PLD) and molecular beam epitaxy (MBE). Pt was deposited by PLD on the Si1-xGex alloys with a thin Si sacrificial cap layer fabricated by MBE. By the reaction of deposited Pt film on Si sacrificial cap layer silicide SBD have been fabricated. Auger electron depth profiling was performed on the films before and after in vacuo annealing to study the redistribution of composition in the reactions. High-resolution transmission electron microscopy (HREM) was used to investigate the interface structure. We have found that Pt react mainly with Si to form silicides at 350 , leaving some Ge to segregate at the surface. While, with the annealing at 600 for 3min the interface of PtSi/Si1-xGex is smooth, and its electrical characterization is prior. Since lowered-barrier-height silicide SBD are desirable for obtaining longer cutoff-wave-length Si-based infrared detectors, the Schottky barrier heights (SBH) of the PtSi/strained Si1-xGex SBDs with smooth interfaces were substantially lower than those of PtSi/Si SBDs, i.e. decreased with increasing Ge fraction, allowing for tuning of the SBDs cutoff wavelength. The SBH of PtSi/Si1-xGex/Si has been found to vary between 0.12-0.58 eV in the temperature range 77-293 K. At 293 K, the ideality factor has been found to be 2.00 and 1.32 for PtSi/Si0.80Ge0.20and PtSi/Si0.75Ge0.25 diodes, respectively. We have shown that high quantum efficiency and near-ideal dark current can be obtained in the film of PtSi/strained Si1-xGex with excellent interface fabricated by MBE and PLD, furthermore annealing at 600 for 3min.