Abstract:One convenient approach to minimize the surface recombination loss in Si is to passivate the surface dangling bonds by depositing a thin TiO 2 layer on the bulk Si. Besides, the p -Si/TiO 2 interface can initiate hole-blocking and facilitate efficient electron transport through the TiO 2 layer; thereby, promoting the extraction of electrons for efficient onward utilization. In this context, the current investigation involves studying how the Ti 3+ donor states, produced by deliberately introducing O-vacancies controlled by changing the plasma pressure in the RF-magnetron sputtering chamber during the growth of the TiO 2 thin films, can change the material's Fermi level and work function and modify the band bending and band offset as well as the fixed oxide charge density in the p -Si/TiO 2 heterojunction interface. The TiO 2 / p -Si interface has been studied through capacitance-voltage (C-V) analysis to determine the interface parameters such as fixed oxide charge, the density of interface traps, and the dielectric constant of TiO 2 . The studied hole-blocking property of the interface has been correlated to the photoresponsivity of the metal-oxide-semiconductor (MOS) structure. The MOS device fabricated at a pressure of 30 mTorr displays a large saturation current (15.95 μA cm –2 ) when subjected to a positive gate bias, facilitated by the relatively low conduction band offset (ΔE C ∼0.20 eV), significant positive fixed oxide charge (+1.18 ×10 11 cm –2 ) and the interface trap density (1.03 ×10 12 cm –2 ), which enhanced the transport of minority carrier electrons from the p -Si to the metal, resulting in a good photo responsivity ∼0.158 AW –1 and photo gain of ∼37.5 under white light illumination. Optimum hole-blocking and surface passivation characteristics of the TiO 2 / p -Si interface together may facilitate fabricating improved heterojunction Si solar cells.

Reducing the effective barrier height of a PtSi Schottky diode by a p+ doping spike using pulsed laser doping

Schottky-Barrier Height Tuning by Means of Ion Implantation into Preformed Silicide Films Followed by Drive-In Anneal

Schottky barrier height lowering induced by CoSi 2 nanostructure

Silicide As Diffusion Source For Dopant Segregation In 70-Nm Mosfets With Ptsi Schottky-Barrier Source/Drain On Ultrathin-Body Soi

A Comparative Study of Two Different Schemes to Dopant Segregation at NiSi/Si and PtSi/Si Interfaces for Schottky Barrier Height Lowering

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Effective Schottky Barrier Height Lowering By TiN Capping Layer For TiSix/Si Power Diode

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal

The impact of sputtering pressure on the TiO 2 / p -Si interface and its implications for hole-blocking and photodetection

A BEEM Study of the Temperature Dependence of the Barrier Height Distribution in PtSi/n-Si Schottky Diodes

Schottky Barrier Height Tuning Via The Dopant Segregation Technique Through Low-Temperature Microwave Annealing

Role of Si Implantation in Control of Underlap Length in Schottky-barrier Source/drain MOSFETs on Ultrathin Body SOI

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Effective Dopants Pb and Pb‐SiW12 to Enhance Sb2S3‐based Photodetector Performance

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

Effects of Carbon on Schottky Barrier Heights of NiSi Modified by Dopant Segregation

Effective Schottky Barrier Lowering in Silicon-on-insulator Schottky-barrier Metal-Oxide-semiconductor Field-Effect Transistors Using Dopant Segregation

Design of Schottky barrier for plasmon-induced hot-electron passivation of defect environments of semiconductor quantum dots

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing

Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.

NiSi/p<SUP>+</SUP>-Si(n<SUP>+</SUP>-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?