Abstract:Ge nanocrystals (Ge-ncs) embedded in a SiO2 superlattice structure were prepared by magnetron cosputtering and postdeposition annealing. The formation of spherical nanocrystals was confirmed by transmission electron microscopy and their growth process was studied by a combination of spectroscopic techniques. The crystallinity volume fraction of Ge component was found to increase with crystallite size, but its overall low values indicated a coexistence of crystalline and noncrystalline phases. A reduction of GeO species was observed in the superlattice during thermal annealing, accompanied by a transition from oxygen-deficient silicon oxide to silicon dioxide. A growth mechanism involving phase separation of Ge suboxides (GeOx) was then proposed to explain these findings and supplement the existing growth models for Ge-ncs in SiO2 films. Further analysis of the bonding structure of Ge atoms suggested that Ge-ncs are likely to have a core-shell structure with an amorphous-like surface layer, which is composed of GeSiO ternary complex. The surface layer thickness was extracted to be a few angstroms and equivalent to several atomic layer thicknesses.

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Formation Mechanism of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence X-Ray Absorption Fine Structure

Growth of Embedded Ge Nanocrystals on Different Substrates

Formation, Structure, and Phonon Confinement Effect of Nanocrystalline Si1−xGex in SiO2-Si-Ge Cosputtered Films

Local Structure of Ge Nanocrystals Embedded in SiO2 Studied by Fluorescence EXAFS Technique

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Nanocrystal formation in SiC by Ge ion implantation and subsequent thermal annealing

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Twinning Ge0.54Si0.46 Nanocrystal Growth Mechanism in Amorphous SiO2 Films

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Study of Si and Ge growth on Si(100) surface

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Nonthermal plasma synthesized freestanding silicon–germanium alloy nanocrystals

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

A New Approach for Synthesizing Ge Quantum Crystallites Embedded in A Sin(X) Films