Investigation of Si IGBT operation at 200 °C for traction application

Zhuxian Xu,Ming Li,Wang, F.,Zhenxian Liang

DOI: https://doi.org/10.1109/ECCE.2011.6064087

2011-01-01

Abstract:In order to satisfy the high density requirement and harsh thermal conditions in future hybrid vehicles, a systematic study of Si IGBT operating at 200°C is performed to determine its feasibility, issues and application guideline. First, the device forward conduction characteristics, leakage current, and switching performance at various temperatures are evaluated through both analytical and lab evaluation. Based on the device characterization, the loss and thermal study is then performed, which provides the guideline for packaging and cooling design. Finally, the possible failure mechanisms at high temperatures including latching and short circuit fault have been tested to ensure the safe and reliable operation of Si IGBTs.