A Method for Improving the Thermal Shock Fatigue Failure Resistance of IGBT Modules

Xinyin Zhang,Meiyu Wang,Xin Li,Zikun Ding,Changsheng Ma,Guo-Quan Lu,Yunhui Mei
DOI: https://doi.org/10.1109/tpel.2019.2963236
IF: 5.967
2020-08-01
IEEE Transactions on Power Electronics
Abstract:High temperature application and long-term reliability are the future development trends of IGBT (insulated gate bipolar transistor) module. This article proposes a 1200-V/50-A IGBT module using the current-assisted sintered nanosilver as die attachment and high-temperature solder as substrate attachment. We measured and compared the electrical and the thermal characteristics, and the reliability of the proposed IGBT modules with those of the commercial IGBT module of the same level. The proposed IGBT modules show consistency with commercial IGBT module in electrical performance, which also proved the feasibility of the current-assisted sintering. The thermal impedance of the proposed IGBT module decreased by 17.2% compared with that of the commercial one. And, the thermal shock test shows that higher resistance to thermomechanical fatigue can be successfully achieved.
engineering, electrical & electronic
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