A Way to Reduce Leakage Current and Improve Reliability of Wire-Bonds for 300-A Multichip SiC Hybrid Modules

Wenbin Deng,Yunhui Mei,Meiyu Wang,Xin Li,Changsheng Ma,Guo-Quan Lu

DOI: https://doi.org/10.1109/jestpe.2020.3028132

IF: 5.462

2021-08-01

IEEE Journal of Emerging and Selected Topics in Power Electronics

Abstract:In this article, pressureless sintering of nanosilver paste is proposed to enhance the reliability of wire-bonds with SiC chips by both alleviating thermomechanical stresses and enhancing thermal coupling of bonding wires and chips. A multichip 1200-V/300-A SiC hybrid module with six Si IGBTs and 12 SiC Schottky barrier diodes (SBDs) is demonstrated. The lifetime of the wire-bonds with the SiC SBD bonded by the pressureless sintered nanosilver is ~27.9% longer than that by the high-temperature solder under power cycling with constant temperature swing. The lifetime of the wire-bonds with the IGBT also bonded by the pressureless sintered nanosilver is ~46.2% longer than that by the high-temperature solder under power cycling with constant conduction current. Furthermore, not only the cost of 1700-V SiC SBDs is quite similar to that of 1200-V ones but also the leakage current of the 1200-V/300-A SiC hybrid module can be reduced greatly using 1700-V SiC SBDs as free-wheeling diodes instead of the regular 1200-V ones. Considering the much larger leakage current of a SiC SBD compared with that of a Si p-i-n diode. It is feasible to use a SiC SBD with higher blocking voltage to reduce the significant leakage current of the free-wheeling SBD with almost no cost increase.

engineering, electrical & electronic

What problem does this paper attempt to address?

The problems that this paper attempts to solve mainly focus on two aspects:

1. **Reducing Leakage Current**:
- When the silicon carbide Schottky barrier diode (SiC SBD) is used as a freewheeling diode (FWD), its leakage current is much larger than that of a silicon PIN diode with the same blocking voltage. This results in more power losses and safety issues when the hybrid module is in operation.
- The paper proposes to use a 1700V SiC SBD to replace the 1200V SiC SBD in order to significantly reduce the leakage current. Since the 1700V SiC SBD has a thicker drift layer, its internal electric field is lower, thus reducing the leakage current.

2. **Improving Reliability**:
- When the converter/inverter based on SiC hybrid modules operates at high efficiency and high case temperature, the higher junction temperature will significantly affect reliability because the Young's modulus of SiC devices is large, which leads to a faster degradation rate of wire - bonds.
- The paper proposes to use pressureless sintered nanosilver as a die - attach material to improve the reliability of wire - bonds. Pressureless sintered nanosilver has high thermal conductivity and low Young's modulus, which can enhance the thermal coupling between wire - bonds and chips and reduce thermal mismatch stress.

Through these improvements, the paper aims to improve the robustness and reliability of SiC hybrid modules at high temperatures, especially achieving significant effects in reducing leakage current and prolonging the life of wire - bonds.