A Compact Velocity-Overshoot Model for Deep-Submicron Bipolar Devices Considering Energy Transport

Hc Wu,Jb Kuo
DOI: https://doi.org/10.1109/16.658675
IF: 3.1
1998-01-01
IEEE Transactions on Electron Devices
Abstract:This paper reports a compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport based on a qualitative analysis. As verified by two-dimensional (2-D) simulation results, the analytical velocity-overshoot model predicts that in a bipolar device with a very short base width, its peak electron velocity, which can exceed the saturated velocity, occurs at a location ahead of its peak electron temperature location.
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