Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

In-plan self-organized two-dimensional-ordered GeSi islands grown on Si[001] by molecular beam epitaxy

Fabrication and Characterization of Ordered GeSi Nanoislands on Si (001) Substrates

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Study of Si and Ge growth on Si(100) surface

Self-organized germanium quantum dots grown by molecular beam epitaxy on Si(100)

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Silicon-based low dimensional quantum structure - self-assembly grown germanium quantum dots

Temperature Dependence of Ordered GeSi Island Growth on Patterned Si (001) Substrates

Strain-Mediated Uniform Islands in Stacked Ge/Si(001) Layers

Island-growth of SiCGe films on SiC

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

Growth and In-Plane Undulations of GaAs/Ge Superlattices on [001]-Oriented Ge and GaAs Substrates: Formation of Regular 3D Island-in-network Nanostructures

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

The growth and investigation of SiGe films on buried Ge islands

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Arrayed van der Waals Vertical Heterostructures based on 2D GaSe Grown by Molecular Beam Epitaxy

Controlled Formation of GeSi Nanostructures on Periodic Si (001) Sub-Micro Pillars.

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy