Abstract:Phase-change random access memory has been served as a bridge across the memory wall within the conventional von Neumann computing architecture, owing to its excellent non-volatility and rapid switching. Nitrogen doping in Ge2Sb2Te5-like phase-change materials (PCMs) was a routine method for enhancing non-volatility of amorphous phases, although sacrificing crystallization speed markedly. Here we introduced N element into Sc0.3Sb2Te3 PCM that possesses sub-nanosecond crystallization speed, trying to cope with stability/reliability issues raised by backend thermal-budget processing. However, we observed an abnormal deterioration in thermal stability of N-doped amorphous Sc0.3Sb2Te3 films. As compared to the undoped counterparts, they exhibit a weakened fragile-to-strong crossover in viscosity that gives rise to a higher atomic mobility at elevated temperatures while a less rigid vitreous network at low temperatures. Therefore, N doping leads to an accelerated crystal growth rate and a higher steady-state nucleation rate in heterogeneous manner, causing a faster crystallization, whereas the kinetic suffocation contributed by original Sc element as approaching room temperature must have been partially counteracted by N dopant. This acceleration in crystallization kinetics delivers N-doped Sc0.3Sb2Te3 as a promising candidate in working memory.

Investigation of phase transition behaviors of the nitrogen-doped Sb-rich Si-Sb-Te films for phase-change memory

Nitrogen and Silicon Co-Doping of Ge2Sb2Te5 Thin Films for Improving Phase Change Memory Performance

Study of Si-Doped Sb2te3 Films for Phase Change Memory

Characteristics of Si-Sb-Te Films for Phase Change Memory

Characteristics of Si-doped Sb2Te3 thin films for phase-change random access memory

Anomalous crystallization kinetics of ultrafast ScSbTe phase-change memory materials induced by nitrogen doping

Understanding the microstructure evolution of carbon-doped Sb2Te3 phase change material for high thermal stability memory application

Effects of Germanium and Nitrogen Incorporation on Crystallization of N-Doped Ge2+Xsb2te5 (X=0,1) Thin Films for Phase-Change Memory

Dependence Of The Properties Of Phase Change Random Access Memory On Nitrogen Doping Concentration In Ge2sb2te5

Investigation of Ge2Sb2Te5/Si Nano-Multilayered Films for Phase-Change Memory Applications

Effects of Si Doping on the Structural and Electrical Properties of Ge2Sb2Te5 Films for Phase Change Random Access Memory

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

Improved Phase-Change Characteristics of Si Doped Gesbte Thin Films Used for Phase Change Memory

Investigation of Ni Doped Ge-Te Materials for High Temperature Phase Change Memory Applications

Si–Sb–Te films for phase-change random access memory

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Improvement of Electrical Properties of the Ge2sb2te5 Film by Doping Si for Phase-Change Random Access Memory

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Graphite Carbon-Doped Sb 2 Te Nanostructures for Phase-Change Memory Applications

The fabrication and properties of N-doped Sb2Te3 phase-change materials prepared by pulsed laser deposition

Advantages of Sisb Phase-Change Material and Its Applications in Phase-Change Memory