Abstract:Ultrathin nanocrystalline silicon films have been fabricated by plasma enhanced chemical vapour deposition from hydrogen-diluted SiCl4 at a low temperature of 250 degrees C. The Raman spectra measurements and high resolution transmission electron microscopy observations reveal that nanocrystalline silicon can be directly grown on an insulator glass substrate at the initial growth of the deposition process. The crystallinity and the grain size increase with the increase in the deposition period. Furthermore, the crystalline fraction as well as the grain size also increase with the decrease in the hydrogen dilution ratio. The I-V characteristic curves measured by a tuned Langmuir probe in the SiCl4/H-2 plasma region at a substrate temperature of 100 degrees C show that silicon films with higher conductivity were deposited on the probe surface in the deposition process. This behaviour is completely different from that observed in the SiH4/H-2 system. It is considered that the formation of nanometre size grains occurs in the gas phase reaction process at the initial stage of film growth, while the growth of grains is mainly governed by the surface reaction process where chlorine and hydrogen play an important role. The direct growth of nanocrystalline Si on the insulator surface at low temperatures using SiCl4/H-2 opens up the possibility of directly fabricating nc-Si/SiO2 or nc-Si/a-SiNx systems at low temperatures.

Initial growth of intrinsic microcrystalline silicon thin film: Dependence on pre-hydrogen glow discharge and substrate surface morphology

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Substrate-thickness dependence of hydrogenated microcrystalline silicon nucleation rate on amorphous silicon layer

Influence of Ultrathin Amorphous Silicon Layers on the Nucleation of Microcrystalline Silicon Films under Hydrogen Plasma Treatment

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Investigation on the Initial Growth of Nanocrystalline Silicon Prepared from Hydrogen-Diluted Sicl4 at Low Temperatures

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Study on crystallization of hydrogenated nanocrystalline silicon carbon films