Abstract:In this paper two kinds of novel localized-SOI structure devices, named as Quasi-SOI MOSFET and source-drain -on-nothing(SDON)/source-drain-on-insulator (SDOI) MOSFET, are demonstrated which can combine the advantages of SOI and bulk substrates. In the Quasi-SOI structure with the source/drain regions quasi-surrounded with insulator and the channel region directly connected with the bulk substrate, short channel effects (SCE), parasitic capacitance and self-heating effects (SHE) can be effectively reduced. The problem of degraded mobility and increased threshold voltage due to ultra-thin body in UTB SOI MOSFET's can also be solved. A method to fabricate the Quasi-SOI MOSFET is put forward. Process-device co-simulation results further show good scaling capability and excellent heat dissipation of the Quasi-SOI devices. In the SDON/SDOI device with the recessed S/D extension regions and source-drain staying on the partially buried layers, the advantages of quasi-SOI MOSFET can be maintained with the parasitic capacitance further reduced and the fabrication technology basically compatible with the standard CMOS technology. The proposed two structures can be considered as good candidates for highly-scaled devices.

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

Enhanced Radiation Hardness in SOI MOSFET with Embedded Tunnel Diode Layer

Simulation of a Novel Schottky Body-Contacted Structure Suppressing Floating Body Effect in Partially-Depleted SOI nMOSFET's

Eliminating the Floating-Body Effects in a Novel CMOS-compatible Thin-Soi LDMOS

Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation

Simulation of Suppression of Floating-Body Effect in Partially Depleted SOI MOSFET Using a Si1−xGex Dual Source Structure

T-Shaped Body Silicon-on-Insulator (SOI) MOSFET

Analysis of a High-Performance Ultra-Thin Body Ultra-Thin Box Silicon-on-insulator MOSFET with the Lateral Dual-Gates: Featuring the Suppression of the DIBL

A Novel Salicide Body-Contacted Structure for Partially Depleted SOI Nmosfets

A Novel Drain Source On Insulator (Dsoi) Structure To Fully Suppress The Floating-Body And Self-Heating Effects

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Enhanced Critical Electrical Characteristics in a Nanoscale Low-Voltage SOI MOSFET With Dual Tunnel Diode

Experimental Results on Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Patterned Buried Oxide Layers under A Single Mosfet to Improve the Device Performance

A High Figure-Of-Merit Soi Mosfet with A Double-Sided Charge Oxide-Trench

Design and optimization of a novel SOI LDMOS structure using PIN junction

High-Voltage SOI Deep Trench LDMOS with Quasi Vertical Super Junction Structure

Novel Localized-SOI MOSFET's Combining the Advantages of SOI and Bulk Substrates for Highly-Scaled Devices

A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

Characterization of DC, Analog/rf, and Low Frequency Noise in Silicon-on-insulator Nmosfets with Different Body-Contact Structures

A new self-aligned BOI (Body-on-insulator) finfet fabricated on bulk SI wafers