Abstract:The atomic force microscope (AFM) can be used in dynamic tipping mode as an effective lithography technique capable of manufacturing nanometer sized devices on the surface of a silicon wafer with a higher resolution surface characterization. The most difficult challenge in fabrication of nanostructure based on AFM nano-oxidation approach is the way of controlling an electric field between a cantilever probe tip and a silicon wafer. A water bridge builds up between the tip and the wafer, resulting in the oxidation due to the high electric field in the region. A reconstructive AFM system for nano-oxidation with a tapping model, implemented in an air, was developed. The presented AFM implements the increasing of electric field intensity by analyzing the impact voltage from −1 V to −5 V, electric field, and ion concentrations at the ambient/oxide and oxide/silicon interfaces, while the growth of thin oxides assumes a single liquid/silicon interface, which is modeled as an infinitely long conducting plane. Therefore, particle distribution for the surface charge density is generated for topography simulations. Based on the control-parameters, an enhanced electrical field of up to 1010 V/m can be obtained, which provides a powerful support for controllable experimental study of nanostructures fabrication with AFM tip induced local anodic oxidation. This showed the dependence of applied voltage types and various nanostructures and life time of AFM tip, by controlling tip-sample position in nanolithography processes is an important factor for controlling the aspect electric field distribution. And the effect of different parameters on enhancement distribution was performed and analyzed in this paper.

Influence Factors of the Stress-Dependent Nonuniform Silicon Oxidation and Its Application to Nano-Aperture Fabrication

Influence factors of the stress-dependent nonuniform monocrystalline silicon oxidation under geometric constraint

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Non-uniaxial Stress-Assisted Fabrication of Nanoconstriction on Vertical Nanostructured Si.

Fabrication of Nano-Aperture Hollow Tip Array for Microplasma Etching

Design and fabrication of a nanofluidic channel by selective thermal oxidation and etching back of silicon dioxide made on a silicon substrate

New Design Concept for Stable Α-Silicon Nitride Based on the Initial Oxidation Evolution at the Atomic and Molecular Levels

Generation and distribution of residual stress during nano-grinding of monocrystalline silicon

Surface Evolution At Nanoscale During Oxidation: A Competing Mechanism Between Local Curvature Effect And Stress Effect

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Initial stage oxidation on nano-trenched Si(1 0 0) surface

Fabrication of cantilever arrays with nano-aperture hollow tips for parallel microplasma etching

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Study Of Dry Oxidation Of Triangle-Shaped Silicon Nanostructure

3-D finite element calculation of electric field enhancement for nanostructures fabrication mechanism on silicon surface with AFM tip induced local anodic oxidation

Effect of oxygen plasma on nanomechanical silicon nitride resonators

Understanding of the retarded oxidation effects in silicon nanostructures

Electrochemical Formation of Self-positioned Nano-Sized Pores on Oxidized Porous Silicon Substrate

Surface Engineering of Polycrystalline Silicon for Long-Term Mechanical Stress Endurance Enhancement in Flexible Low-Temperature Poly-Si Thin-Film Transistors.

Stress-assistant selective etching mechanism for lithography-independent nanofabrication

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching