Abstract:Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer film. However, the analysis of ultrathin films is complicated by the correlation of the dielectric constant and the thickness. This problem is usually resolved by fixing one or the other value, limiting the information that can be extracted. Here, we propose a method to determine unambiguously the refractive index, extinction coefficient and thickness of a film when a transparent range is available in the energy range investigated. We decompose the analysis in three steps. First, the thickness of the film is determined from the transparent range of the film. Then, knowing the thickness of the layer, an initial estimation of the refractive index and extinction coefficient is made based on a first-order Taylor expansion of the ellipsometric ratio. Finally, using this estimation, a numerical regression is done to ensure the convergence of the fit towards the solution. A theoretical example of the method is given for two different thicknesses of TiO2 films. Finally, the method is applied to the experimental data measured during the atomic layer deposition of a thin film of Hf0.5Zr0.5O2 grown on Si. The thickness, refractive index and extinction coefficient are retrieved with a high precision in the energy range of 3.5 - 6.5 eV. A detailed analysis is presented on the accuracy of the retrieved values and their dependency on random and systematic errors for different energy ranges.

Determination of Mean Thickness of an Oxide Layer on A Silicon Sphere by Spectroscopic Ellipsometry

Determining mean thickness of the oxide layer by mapping the surface of a silicon sphere.

Thickness measurement of the oxide layer on the silicon sphere by spectroscopic ellipsometry

A Novel Ellipsometer for Measuring Thickness of Oxide Layer on the Surface of Silicon Sphere

Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry

A Novel Method for Diameter Measurement of Silicon Single Crystal

Interferometric diameter determination of a silicon sphere using a traceable single laser frequency synthesizer

Interferometric determination of the silicon sphere diameter using a laser frequency tuning system calibrated by a Fabry-Perot cavity

Determination of the Optical Constants of Solar-Control Amorphous Silicon Thin Films on Float Glass

Novel wide-angle ellipsometric arrangement for thin film thickness measurement

A Traceable Calibration Method for Spectroscopic Ellipsometry

A Research of Thickness Measurement of Nano-Porous Alumina Films Based on Reflection Spectrum

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Experimental determination of reference intensity ratio essential for accurate thickness measurement of HfO2 ultrathin films by XPS

Scattered Refractive Index Profiles of Thin Silicon Oxide Film on Silicon Substrate

Ellipsometry Study on Nanoparticles Grown by Atomic Layer Deposition

A fully automatized method for the unambiguous wavelength-by-wavelength determination of the thickness and optical property of a very thin film with a transparent range

Determination of the thickness and optical constants of amorphous silicon

Determination of film thicknesses of metal oxides prepared by atomic layer deposition on SBA-15