Thickness measurement of the oxide layer on the silicon sphere by spectroscopic ellipsometry

吴学健,张继涛,李岩,罗志勇,尉昊赟

DOI: https://doi.org/10.16136/j.joel.2011.09.009

2011-01-01

Abstract:In order to improve the standard uncertainty of Avogadro constant determined by the X-ray crystal density method,an automatic scanning measurement system based on the spectroscopic ellipsometry and the two-dimensional silicon（Si） sphere scanning mechanism is proposed,which is used for determining the thickness of the oxide layer on a single crystal silicon sphere with the diameter of 93.6 mm and the mass of 1 kg approximately.By measuring the oxide layer thickness at 400 points on the standard silicon sphere,the thickness distribution of the oxide layer is obtained and the mean thickness is 6.00（22） nm.The relative standard uncertainty of Avogadro constant caused by the uncertainty of the oxide layer thickness can be reduced down to 2.5×10-8.