Study on Precision Measurement of Hi-Purity Monocrystal Silicon Material Density Difference at Sub-ppm Level

Wang-Jin Tao,Liu-Xiang,Xu-Chang Hong,Li-Zhi Hao,Tong-Lin
DOI: https://doi.org/10.1166/jno.2017.2280
2017-01-01
Journal of Nanoelectronics and Optoelectronics
Abstract:The measurement on micro-density difference between monocrystal silicon spheres is the key method of quality control for the hi-purity monocrystal silicon preparation process in the semiconductor industry. Therefore, a reference measurement method of monocrystal silicon sphere density is proposed based on the static suspension principle. The density of tribromopropane and dibromethane mixture is adjusted finely by use of static pressure and temperature, so that the two monocrystal silicon spheres to be measured keep suspended in the solution. The density difference can be obtained based on the pressure and solution temperature. The thesis takes the dual-cycle water bath and temperature control system to achieve the +/- 100 mu K solution measurement environment at a constant temperature. Image recognition method is used to measure the suspension height of the monocrystal silicon spheres. According to the test results, this measurement method herein can avoid the influences of the solution surface tension for the sub-ppm precision measurement of monocrystal silicon sphere density difference at relative uncertainty level of 2.5x10(-7).
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