Abstract:Semiconductor devices favor high carrier mobility for reduced Joule heating and high thermal conductivity for rapid heat dissipation. The ability to accurately characterize the motion of charge carriers and heat carriers is necessary to improve the performance of electronic devices. However, the conventional approaches of measuring carrier mobility and thermal conductivity require separate and independent measurement techniques. These techniques often involve invasive probing, such as depositing thin metal films on the sample as Ohmic contacts for characterizing electrical transport or as optical transducers for characterizing thermal transport, which becomes more cumbersome as the geometry of the semiconductor devices becomes small and complicated. Here we demonstrate a non-contact frequency-domain pump-probe method that requires no sample pretreatment to simultaneously probe carrier and phonon transport. We find that the optical reflectance depends on both excess carriers and phonons in response to exposure to a modulated continuous-wave pump laser source. By modeling the ambipolar diffusion of photo-induced excess carriers, energy transfer between electrons and phonons, and phonon diffusion, we are able to extract temperature-dependent electrical and thermal transport coefficients in Si, Ge, SiGe and GaAs. The intrinsically weak perturbation from the continuous-wave pump laser avoids invoking the highly nonequilibrium transport regime that may arise when using a pulsed laser and allows for accurate assessment of electrical transport in actual devices. Our approach provides a convenient and accurate platform for the study of the charge transport and energy dissipation in semiconductors.

Measurement Of Semiconductor Silicon Wafer'S Doping Concentration And It'S Uniformity Based On Thermo-Needles Method

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

Nondestructive Measurement and High-Precision Evaluation of the Electrical Conductivity of Doped GaAs Wafers Using Microwaves.

Contactless Measurement Of Electrical Conductivity Of Si Wafers Independent Of Wafer Thickness

Characterizations on the Doping of Single-Crystal Silicon Carbide

Measurement of the Thermal Transport Properties of Dielectric Thin Films Using the Micro-Raman Method

A Method For Quantitative Evaluation Of Electrical Conductivity Of Silicon Wafers By Millimeter-Waves

Nondestructive measurement of conductivity of doped GaAs using compact microwave instrument

Quantitative Measurement of the Charge Carrier Concentration Using Dielectric Force Microscopy

Electrical Characterization of Doped Silicon Using High-Frequency Electromagnetic Waves

Direct Measurement for Nanoscale Vertical Carrier Diffusion on Semiconductor Surface—an Approach Toward Scanning Diffusion Microscopy

Measurement on Concentration of Boron Impurity in Thin Silicon Foils Prepared by Heavy-doped Self-stop Etching Process

A Novel Measurement Method for Measuring the Concentration-Dependent Mutual Diffusion Coefficients Based on Finite Volume Method

Towards quantification of doping in gallium arsenide nanostructures by low‐energy scanning electron microscopy and conductive atomic force microscopy

Probing carrier and phonon transport in semiconductors all at once through frequency-domain photo-reflectance

Measurement of temperature-dependent diffusion coefficients using a confocal Raman microscope with microfluidic chips considering laser-induced heating effect.

Study on Precision Measurement of Hi-Purity Monocrystal Silicon Material Density Difference at Sub-ppm Level

Measurement of Energetic and Lateral Distribution of Interface State Density in Fully-Depleted Silicon on Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

Measuring Minority Carrier Diffusion Length Using High-Injection Scanning Photocurrent Microscopy

A method for measuring carrier capture cross sections of deep centers with eliminating the influence of inhomogeneous carrier distribution

Measurement of Thermal Field Temperature Distribution Inside Reaction Chamber for Epitaxial Growth of Silicon Carbide Layer