Novel wide-angle ellipsometric arrangement for thin film thickness measurement

A W Abdallah,R Tutsch,N N Nagib
DOI: https://doi.org/10.1088/2399-6528/aac084
2018-05-08
Journal of Physics Communications
Abstract:A parabolic mirror is used for the first time in a wide-angle ellipsometric system to determine the parameters ψ and Δ and the thickness of SiO2 layer naturally grown on Si crystal substrate. Collimated illuminating beam of diameter 20 mm incident on a parabolic mirror is reflected at the Si-SiO2 system to provide wide angle of incidence. The polarization states of points in the illuminated area are determined and the data is analyzed for real-time thickness maps over the measured area of the surface. The thickness of SiO2 layer is found as 3.02 nm with Standard deviation ±0.12 nm. Null ellipsometer is also used at different angles of incidence to check our result and nearly the same thickness value was obtained.
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