Abstract:Spectroscopic ellipsometry is a powerful method with high surface sensitivity that can be used to monitor the growth of even sub-monolayer film. However, the analysis of ultrathin films is complicated by the correlation of the dielectric constant and the thickness. This problem is usually resolved by fixing one or the other value, limiting the information that can be extracted. Here, we propose a method to determine unambiguously the refractive index, extinction coefficient and thickness of a film when a transparent range is available in the energy range investigated. We decompose the analysis in three steps. First, the thickness of the film is determined from the transparent range of the film. Then, knowing the thickness of the layer, an initial estimation of the refractive index and extinction coefficient is made based on a first-order Taylor expansion of the ellipsometric ratio. Finally, using this estimation, a numerical regression is done to ensure the convergence of the fit towards the solution. A theoretical example of the method is given for two different thicknesses of TiO2 films. Finally, the method is applied to the experimental data measured during the atomic layer deposition of a thin film of Hf0.5Zr0.5O2 grown on Si. The thickness, refractive index and extinction coefficient are retrieved with a high precision in the energy range of 3.5 - 6.5 eV. A detailed analysis is presented on the accuracy of the retrieved values and their dependency on random and systematic errors for different energy ranges.

Study of thin oxide films by ellipsometry and ARXPS

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Study of Annealing Effects Upon the Optical and Electrical Properties of SnO2:F/SiCxOy Low Emissivity Coatings by Spectroscopic Ellipsometry

Study on angle-variable ellipsometry of super-thin SiO2 film grown by rapid thermal oxidation

A fully automatized method for the unambiguous wavelength-by-wavelength determination of the thickness and optical property of a very thin film with a transparent range

FTIR and XPS Investigation of Er-doped SiO2–TiO2 Films

In Situ Spectroscopic Ellipsometry Study of TiO2 Films Deposited by Plasma Enhanced Chemical Vapour Deposition

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

XPS Analysis of Nano‐thin Films on Substrate

Accurate Analysis of Ellipsometric Data for Thick Transparent Films

AFM-IR investigation of thin PECVD SiOx films on a polypropylene substrate in the surface-sensitive mode

Ellipsometric Study of the Optical Properties of Silicon-Based Si : Sio2 Composite Thin Films under Different Annealing Temperatures

Ellipsometry Study on Nanoparticles Grown by Atomic Layer Deposition

A systematic study to investigate the effects of X-ray exposure on electrical properties of silicon dioxide thin films using X-ray photoelectron spectroscopy

Real-time, in situ spectroscopic ellipsometry for analysis of the kinetics of ultrathin oxide-film growth on MgAl alloys

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

Incoherent partial superposition modeling for single-shot angle-resolved ellipsometry measurement of thin films on transparent substrates

A Traceable Calibration Method for Spectroscopic Ellipsometry