Abstract:Amorphous SiOx（0≤x≤2.0）films were deposited at 300℃ by plasma-enhanced chemical vapor deposition（PECVD）using SiH4-O2 mixtures.The properties of infrared (IR) absorption for Si—O—Si bonds have been investigated.Two characteristic absorption peaks at around 1050 and 1150cm-1 arise from Si—O—Si stretching mode，and one absorption peak at around 800cm-1 from Si—O—Si bending mode.It is found that Isum/NSi ratio,of the sum of the absorption intensities for both 1000 and 1150cm-1 bands to the density of Si atoms increases linearly with x when x increasing from 0 to 2.0.The proportionality coefficient ASiO(inverse of the oscillator strength) of the Si—O—Si stretching mode is obtained to be 1.48×1019cm-2.On the other hand，the apparent absorbance αapp,in a-SiO2 films is found linear with the increasing film thickness d as αapp=kd,for both 800cm-1 and 1050cm-1 bands.The proportionality coefficients k for 800 and 1050cm-1 bands are obtained to be 3.2×103 and 2.9×104cm-1.By comparison with the values of k reported in other papers,it indicates that k value is closely related to the film density.With the values of ASiO and k above-mentroned,the O content in a-SiOx∶H and film thickness for a-SiO2 can be determined nondestructively using IR absorption techniques.

Study on angle-variable ellipsometry of super-thin SiO2 film grown by rapid thermal oxidation

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Study of plasma-deposited amorphous SiO2 films using infrared absorption techniques

A study of plasma-deposited amorphous SiOx:H (0⩽x⩽2.0) films using infrared spectroscopy

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Study of Crystallization and Phase Mixing in Sio2/Siox Superlattices Through Form Birefringence Measurements

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Study of thin oxide films by ellipsometry and ARXPS

Study of Annealing Effects Upon the Optical and Electrical Properties of SnO2:F/SiCxOy Low Emissivity Coatings by Spectroscopic Ellipsometry

FT-IR study of silicon dioxide films fabricated by rapid thermal oxidation

Spectroscopic Ellipsometric Study of Size-Controlled Silicon Nano-Crystals in Sio2 Composite Thin Film

The Impact of Thickness and Thermal Annealing on Refractive Index for Aluminum Oxide Thin Films Deposited by Atomic Layer Deposition

Optical Constants and Band Gap Evolution with Phase Transition in Sub-20-nm-Thick TiO2 Films Prepared by ALD

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Evolution of Optical Constants of Silicon Dioxide on Silicon from Ultrathin Films to Thick Films

Oxidation Conditions of Ti and Photocatalysis of TiO2 Ceramic Films

Effect of Rapid Thermal Annealing on Optical and Interfacial Properties of Atomic-Layer-Deposited Lu2o3 Films on Si (100)

Thickness Dependent Optical Properties of Titanium Oxide Thin Films

Study of the Crystal Structure, Band Gap and Dispersion Evolution in Titanium Oxide Thin Films

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD