Abstract:The successful combination of electromagnetic scattering simulations and optical measurements allows for the quantification of deep-subwavelength features, including thicknesses via ellipsometry and parameterized geometries via scatterometry. Although feature size reduction has slowed in recent years, nanoelectronics still yields ever-smaller structures, thus optical measurement capabilities are ever-challenged. The critical problem is that the optical properties of materials often become thickness dependent at sub-5 nm, greatly complicating accurate fitting. These optical properties can be characterized empirically using ellipsometry and used with other prior information to reduce uncertainties via hybrid metrology, but atomistic modeling offers a unique perspective on the macroscopic optical response from features with dimensions only a few atoms in width. To illustrate the potential of such modeling, we have performed a series of density-functional theory (DFT) calculations for an ultrathin film, Si with hydrogen-terminated Si(111) surfaces. Kohn-Sham wavefunctions determined in DFT are instrumental in solving for the dielectric tensor of these configurations, as the in-plane and out-of-plane components can differ greatly with respect to incident wavelength and Si thickness. Techniques for DFT and dielectric tensor determination are reviewed, highlighting both their limitations and potential for improving optics-based metrology. The thickness- and wavelength-dependence of the resulting tensor components are parameterized using Tauc-Lorentz and Lorentz oscillators. Using an illustration from goniometric reflectometry, the quantitative effects upon dimensional metrology of employing the full thickness-dependent dielectric tensor are compared against simpler approximations of these optical properties. Reductions in parametric uncertainty in the thickness and optical constants are evaluated with a prior knowledge of the ultrathin film’s thickness with uncertainties.

A Novel Ellipsometer for Measuring Thickness of Oxide Layer on the Surface of Silicon Sphere

Determination of Mean Thickness of an Oxide Layer on A Silicon Sphere by Spectroscopic Ellipsometry

A Novel Method for Diameter Measurement of Silicon Single Crystal

Thickness measurement of the oxide layer on the silicon sphere by spectroscopic ellipsometry

Determining mean thickness of the oxide layer by mapping the surface of a silicon sphere.

A novel measurement system for silicon melt level in Czochralski crystal pullers based on laser triangulation

Mixed polarization in determining the film thickness of a silicon sphere by spectroscopic ellipsometry

Thickness Measurements of Oxide and Carbonaceous Layer on A28si Sphere by Using XPS

XPS Analysis of a 28Si-Enriched Sphere for Realization of the Kilogram

Novel wide-angle ellipsometric arrangement for thin film thickness measurement

Interferometric determination of the silicon sphere diameter using a laser frequency tuning system calibrated by a Fabry-Perot cavity

Interferometric diameter determination of a silicon sphere using a traceable single laser frequency synthesizer

Fizeau-type interferometric probe to measure geometrical thickness of silicon wafers

Surface Layer Analysis of Si Sphere by Xrf and Xps

Measuring the Multilayer Silicon Based Microstructure Using Differential Reflectance Spectroscopy

XPS Study of Silicon Spheres As a Density Standard

Volume Measurement of a 28Si-Enriched Sphere to Determine the Avogadro Constant at NMIJ

Decoupled Measurement of Silicon-Based Film and Substrate Thickness by Hybrid Reflectance Spectroscopy

Supplementing rigorous electromagnetic modeling with atomistic simulations for optics-based metrology

Absolute Measurement of the Density of Silicon Spheres to Improve the Primary Density Standard of NMIJ

Investigating Stability of Si Sphere Surface Layer in Ambient–Vacuum Cyclic Measurements Using Ellipsometry