Abstract:In this Letter, the p-GaN high electron mobility transistor (HEMT) with hybrid drain of recessed Schottky (RS) and p-GaN isolation blocks' drain (HSP drain) is proposed and fabricated for good reverse blocking capability. The related operation mechanism has been investigated and revealed. The proposed device features a drain terminal consisting of the array-distributed recessed Schottky and p-GaN isolation blocks. Based on the features, the reverse leakage current (5x10(-9) A/mm at V-DS=-100V) is obviously reduced by two orders of magnitude compared with that (5x10(-7) A/mm) of p-GaN HEMTs only with recessed Schottky (RS) drain, which is the lowest leakage current among the reported GaN-on-Si reverse blocking transistors. The introduction of these p-GaN isolation blocks has a negligible impact on V-on (V-on=0.63V). Therefore, a good improvement in the trade-off between the reverse leakage current and V-on could be achieved because of the significant reduction in the reverse leakage current without sacrificing V-on. In addition, the reverse breakdown voltage of -800V at 1 mu A/mm with a substrate grounded in the proposed device is evidently improved compared with the counterpart (-680V), which is attributed to effective alleviation of the high electric field near the HSP drain. These results demonstrate the significance and potential of p-GaN HEMTs with HSP drain in reverse blocking applications. Published under an exclusive license by AIP Publishing.

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