Abstract:In this work, we demonstrate the on-chip normally-off /on AlGaN/GaN HEMTs with the compatible fabrication processes. The normally-off HEMT utilizes a p-GaN gate to deplete the 2DEG channel, while the normally-on device adopts a MIS gate without the p-GaN layer. Supported by the devices fabrication, the normally-off/on devices are realized on one chip with the same processes. A threshold voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> ) of 2.5V and a drain current (I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> ) of 324mA/ mm are obtained in the normally-off p-GaN gate HEMT. And the normally-on MIS gate HEMT shows V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> =−3.3V and I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> =408mA/mm. Both of the two devices present the competitive I <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">D</inf> -V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</inf> performances compared with the existing works. This feature suggests that the on-chip normally-off/on AlGaN/GaN HEMTs could be a promising candidate for GaN power integrated technologies.

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Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT