Development of GaN Monolithic Integrated Circuits for Power Conversion

Yung C. Liang,Ruize Sun,Yee-Chia Yeo,Cezhou Zhao
DOI: https://doi.org/10.1109/cicc.2019.8780294
2019-01-01
Abstract:This paper describes the development of a viable platform for the design of full GaN (Gallium Nitride) monolithic integrated circuits for power conversion applications. The Normally-on and normally-off AlGaN/GaN power HEMT devices are used for the integrated circuit design using the ADS (Advanced Design System) tool. A monolithic switched-mode DC-DC buck converter with integrated functional blocks and over-current protection is used to showcase the suitability of the development. The designed GaN power integrated circuit was fully fabricated and tested to verify its functionality in power conversion.
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