Development of GaN Power IC Platform and All GaN DC-DC Buck Converter IC

Ruize Sun,Y. C. Liang,Yee-Chia Yeo,Cezhou Zhao,Wanjun Chen,Bo Zhang

DOI: https://doi.org/10.1109/ispsd.2019.8757674

2019-01-01

Abstract:In this paper, the GaN power IC platform is developed based on Au-free AlGaN/GaN MIS-HEMTs and a constant-output-ripple all GaN DC-DC buck converter IC is firstly realized with integrated gate driver, pulse width modulation (PWM) feedback control and over-current protection (OCP) circuits. The fabricated all GaN integrated DC-DC buck converter can realize stable 10 V output with constant output ripples when input voltage varies from 15 to 30 V. The output and ripples remain stable with varying load resistance. When subjected to over-current incident, the fabricated power IC can be protected according to desired over-current threshold values. The experiment results have demonstrated the functionality and feasibility of all GaN power ICs in power conversion applications.