Abstract:Gallium nitride (GaN) high electron mobility transistors (HEMTs) are promising power devices due to their excellent characteristics. However, GaN HEMTs have vulnerable gates that are susceptible to noise and voltage spikes, limiting their implementation in power converters. This paper presents a GaN HEMTs half-bridge driver with bandgap reference comparator clamping (BGRCC) and dual level shifters (DLS) for high switching frequency automotive applications. The BGRCC scheme can adaptively clamp the bootstrap rail voltage at an appropriate level with acceptable voltage ripples, which guarantees the safety of high-side GaN HEMT. Meanwhile, DLS scheme is applied in both the high- and low-side driving path to effectively drive the GaN HEMTs with low propagation delay and high dv/dt immunity. The proposed driver is fabricated in 0.18 μm high voltage bipolar-complementary metaloxide semiconductor (CMOS)-double-diffused metaloxide semiconductor (DMOS) process and can support 2–10 MHz operating. The functionality and performance are verified by experimental results. A buck converter utilizing this driver with GaN HEMTs can achieve maximum efficiency of 91.58% with quite electromagnetic interference behavior in the 16.5-W output power rating when operating at 2 MHz, which is superior to conventional silicon-based power converters and suitable for automotive applications.

Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion

A 2–10 MHz GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping and Dual Level Shifters for Automotive Applications

A 2mhz Constant-Frequency AOT V-2 Buck Converter with Adaptive Dead Time Control for Data Centers

A Tri-Slope Gate Driving GaN DC–DC Converter with Spurious Noise Compression and Ringing Suppression for Automotive Applications

A GaN HEMTs Half-Bridge Driver with Bandgap Reference Comparator Clamping for High-Frequency DC-DC Converter.

A Buck Converter with Cost-Effective GaN/Si Hybrid Switches and CRM Operation for High-Efficiency and High-Power-Density Applications

Monolithic Control and Drive Blocks of AlGaN/GaN MIS-HEMTs for DC-DC Buck Converters

A High Frequency High Efficiency GaN Based Bi-Directional 48V/12V Converter with PCB Coupled Inductor for Mild Hybrid Vehicle

High-Efficiency High-Density Critical Mode Rectifier/Inverter for WBG-Device-Based On-Board Charger

Design of a Two-stage DC/DC Converter Based on eGaN Devices

A Modular Cascaded Multilevel Buck Converter Based on GaN Devices Designed for High Power Envelope Elimination and Restoration Applications

A New GaN-Based Device, P-Cascode GaN HEMT, and Its Synchronous Buck Converter Circuit Realization

MHz Level Two-Stage ZVS DC-DC Converter with Wide Input and Output Voltage Ranges

A Fully Integrated Heterogenous Si-CMOS/GaN 500 MHz 6 V-to-18 V Boost Converter Chip

Comparison of the performance of Si, SiC, and GaN based switching elements in high gain DC-DC boost converter

Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter

An 8A 998A/inch<SUP>3</SUP> 90.2% Peak Efficiency 48V-to-1V DC-DC Converter Adopting On-Chip Switch and GaN Hybrid Power Conversion

A Design of High-power Buck Converter Based on Synchronous Rectification

A Unified Switch Loss Model and Design Consideration for Multilevel Boost PFC with GaN Devices

A GaN-based Single-switch Forward Resonant DCX With ZVZCS Winding-clamping

A 10-Mhz Isolated Class DE Resonant DC/DC Converter Based on GaN HEMT