Abstract:The MHz series resonant converter (SRC) dc transformer (DCX) is becoming attractive in industrial applications because of its high efficiency and high power density. For such a high switching frequency 380-12 V DCX, the GaN devices are necessary due to their much lower parasitic capacitance compared to that of high voltage Si MOSFET. By means of analyzing and modeling the conduction losses caused by the parasitic capacitance and R-dson of switches, this paper reveals that the modified figure of merit [23] (NFoM = R-dson . Co-tr) of switch in SRC DCX is the key parameter of determining the primary conduction losses. Then, it is easily deduced that the series connected low voltage devices can reduce primary conduction losses at MHz frequency because the equivalent NFoM is independent of the switch count of series connection. Therefore, low voltage Si MOSFETs with low NFoM are able to be utilized to improve the efficiency at MHz switching frequency. An input-series output-parallel prototype with multiple SRC DCX cells is built up to verify the analysis, where the 60 V MOSFETs are adopted in each circuit cell. The peak efficiency 98.3% and power density 810 W/in(3) are achieved in this 1 MHz 380-12 V 1.8 kW SRC DCX prototype with low NFoM Si devices.

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