Abstract:Novel In0.12Al0.88N/AlN/AlxGa /In0.12Al0.88N metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) grown on a SiC substrate with a drain field-plate (DFP) were investigated. A symmetrically-graded AlxGa (x = ) wide-gap channel with an In0.12Al0.88N back-barrier was devised to enhance the carrier confinement, channel conductivity, and breakdown characteristics. The MOS-gate structure, employing high-k Al2O3 gate dielectric and surface passivation deposited by the non-vacuum ultrasonic spray pyrolysis deposition (USPD) technique, has resulted in enhanced gate modulation and decreased gate leakage current. A control MOS-HFET (sample A) with an equivalent Al0.21Ga0.79N channel and DFP was fabricated in comparison with the present design without/with DFP (samples B1/B2). The present sample B2 (A) has demonstrated a superior maximum drain-source current density ( ) of 937.4 (838.8) mA/mm, maximum extrinsic transconductance ( ) of 89.6 (80.6) mS/mm, on/off-current ratio ( of ( ), two-terminal off-state gate-drain breakdown voltage ( ) of −530 (−490) V, three-terminal on-state drain-source breakdown voltage ( ) of 520 (465) V at 300 K, and the corresponding Baliga's figure-of-merit (BFOM) of 79.5 (39.3) MW/cm2. The present design is promising for high-voltage power-switching circuit applications.

AlGaN/GaN dual gate MOS HFET for power device applications

Dual-metal-gate AlGaN/GaN HEMTs for Power Application

Dua- eta-gate AlGaNiGaN HEMTs for Power Application

GaN metal-oxide-semiconductor field-effect-transistor with atomic layer deposited Al2O3 as gate dielectric

Enhanced Device Performance of AlGaN/GaN HEMTs Using Thermal Oxidation of Electron-Beam Deposited Aluminum for Gate Oxide

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

Multilayer SiNx passivated Al2O3 gate dielectric featuring a robust interface for ultralong-lifetime AlGaN/GaN HEMT

Investigations on In0.12Al0.88N/AlN/AlxGa1−xN/In0.12Al0.88N MOS-HFETs With Symmetrically-Graded Wide-Gap Channel and Drain Field-Plate Design

Low Leakage Current and High-Cutoff Frequency AlGaN/GaN MOSHEMT Using Submicrometer-Footprint Thermal Oxidized TiO2/NiO As Gate Dielectric

Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment

High-Performance Normally-Off ${\rm Al}_{2}{\rm O}_{3}/{\rm GaN}$ MOSFET Using a Wet Etching-Based Gate Recess Technique

Gate leakage suppression of normally-OFF diamond FET by employing MOS-MES hybrid gate structure

Improved Electrical and Deep-UV Sensing Characteristics of Al2O3-Dielectric AlGaN/AlN/SiC MOS-HFETs

A high breakdown voltage AlGaN/GaN MOSHEMT using thermal oxidized Al-Ti as the gate insulator

A Normally-off P-Gate AlGaN/GaN HEMT for High Power Application

Al2O3-Dielectric InAlN/AlN/GaN ${\gamma}$ -Gate MOS-HFETs with Composite Al2O3/TiO2 Passivation Oxides

Normally-off Fully Recess-Gated GaN Metal–insulator–semiconductor Field-Effect Transistor Using Al2O3/Si3N4 Bilayer As Gate Dielectrics

Normally-off hybrid Al2O3/GaN MOSFET on silicon substrate based on wet-etching

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior

Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson's Figures of Merit