Abstract:Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

Deposition and Growth Mechanism of Low-Temperature Crystalline Silicon Films on Inexpensive Substrates

Low-temperature Deposition of Highly Crystallized Silicon Films on Al-coated Polyethylene Napthalate by Inductively Coupled Plasma CVD

Highly Crystallized Silicon Films Grown on Glass Without Amorphous Incubation Layers by Inductively Coupled Plasma Chemical Vapor Deposition

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Deposition Of Controllable Preferred Orientation Silicon Films On Glass By Inductively Coupled Plasma Chemical Vapor Deposition

Aluminum-induced Crystallization During Deposition of Silicon Films by Inductively Coupled Plasma CVD

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Preparation of Polycrystalline Silicon Films by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

Fabrication and Its Characteristics of Low-Temperature Polycrystalline Silicon Thin Films

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Study on the Initial Growth Process of Crystalline Silicon Films on Aluminum-Coated Polyethylene Napthalate by Raman Spectroscopy

Abnormal Crystallization of Silicon Thin Films Deposited by Icp-Cvd

Polycrystalline silicon thin films on glass by aluminum-induced crystallization

Deposition and field emission properties of highly crystallized silicon films on aluminum-coated polyethylene napthalate

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Preparation and Characterization of Crystalline Silicon by Electrochemical Liquid–Liquid–Solid Crystal Growth in Ionic Liquid

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

Low-Temperature (< 100 Degrees C) Poly-Si Thin Film Fabrication on Glass

Columnar Growth of Crystalline Silicon Films on Aluminium-Coated Glass by Inductively Coupled Plasma CVD at Room Temperature

Study on Solid Phase Crystallization of Silicon Films Deposited on Different Substrates