Study of electrical and structural properties of p-type ZnO films along to the growth direction

Bao-chen JIAO,Xiao-dan ZHANG,Ying ZHAO,Chang-chun WEI,Jian SUN,Jing ZHAO,Rui-xia YANG
DOI: https://doi.org/10.3321/j.issn:1005-0086.2008.04.016
2008-01-01
Abstract:N-Al co-doped p-type ZnO films were fabricated by ultrasonic spray pyrolysis. Electrical properties, structural properties, and surface morphology of the ZnO films which were fabricated at different growth times were studied by Hall measurement, X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. The results indicated that N-Al co-doped p-type ZnO film with relatively good properties that include resistivity of 46.8 Ω·cm, hall mobility of 0.05 cm2 V-1 S-1 and carrier concentration of 2.86 × 1018 cm-3 was obtained at a suitable growth when other conditions were fixed.
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