Fabrication Method of Silicon Nanostructures by Anisotropic Etching

Weihua Han,Xiang Yang,Ying Wang,Fuhua Yang,Jinzhong Yu

DOI: https://doi.org/10.1109/group4.2008.4638126

2008-01-01

Abstract:A fabrication method of silicon nanostructures is presented. Silicon nanowire, shift-line structure and islands have been successfully fabricated on SOI wafer using e-beam lithography and anisotropic etching technique.

What problem does this paper attempt to address?

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Huiquan Wang,Zhonghe Jin,Yangming Zheng,Huilian Ma,Tie Li,Yuelin Wang

DOI: https://doi.org/10.1088/0957-4484/19/17/175307

IF: 3.5

2008-01-01

Nanotechnology

Abstract:Boron is selectively implanted on the surface of an n-type silicon wafer to form a p-type area surrounded by an n-type area. The wafer is then put into a buffered oxide etch solution. It is found that the n-type area can be selectively etched without illumination, with an etching rate lower than 1 nm min(-1), while the p-type area can be selectively etched under illumination with a much higher etching rate. The possible mechanism of the etching phenomenon is discussed. A simple fabrication process of silicon nanowires is proposed according to the above phenomenon. In this process only traditional micro-electromechanical system technology is used. Dimensions of the fabricated nanowire can be controlled well. A 50 nm wide and 50 nm thick silicon nanowire has been formed using this method.
Silicon Nano-Wire Fabricated by Boe Silicon Etching

Wang Huiquan,Jin Zhonghe,Li Tie,Ma Huilian,Yang Heng,Jiao Jiwei,Li Xinxin,Wang Yuelin

DOI: https://doi.org/10.3969/j.issn.1004-1699.2007.10.010

2007-01-01

Abstract:It is first found that n-type area of the pn junction can be etched by buffered oxide etch (BOE) solution without any designed irradiation. A novel silicon nano-wire fabrication method based on this phenomenon has been development. All process used were traditional micro-electronic mechanical system (MEMS) technologies. Dimension of the fabricated nano-wire can be well controlled. 50nm width and 50nm thickness silicon nano-wire has been fabricated using this method.
Lithography-free Fabrication of Silicon Nanowire and Nanohole Arrays by Metal-Assisted Chemical Etching

Ruiyuan Liu,Fute Zhang,Celal Con,Bo Cui,Baoquan Sun

DOI: https://doi.org/10.1186/1556-276x-8-155

2013-01-01

Nanoscale Research Letters

Abstract:We demonstrated a novel, simple, and low-cost method to fabricate silicon nanowire (SiNW) arrays and silicon nanohole (SiNH) arrays based on thin silver (Ag) film dewetting process combined with metal-assisted chemical etching. Ag mesh with holes and semispherical Ag nanoparticles can be prepared by simple thermal annealing of Ag thin film on a silicon substrate. Both the diameter and the distribution of mesh holes as well as the nanoparticles can be manipulated by the film thickness and the annealing temperature. The silicon underneath Ag coverage was etched off with the catalysis of metal in an aqueous solution containing HF and an oxidant, which form silicon nanostructures (either SiNW or SiNH arrays). The morphologies of the corresponding etched SiNW and SiNH arrays matched well with that of Ag holes and nanoparticles. This novel method allows lithography-free fabrication of the SiNW and SiNH arrays with control of the size and distribution.
Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Y Y Zhang,J Zhang,G Luo,X Zhou,G Y Xie,T Zhu,Z F Liu

DOI: https://doi.org/10.1088/0957-4484/16/4/015

IF: 3.5

2005-01-01

Nanotechnology

Abstract:A rational approach is described for fabricating multilevel silicon-based nanostructures via scanning probe oxidation (SPO) and anisotropic wet etching. Using silicon oxide nanopatterns on Si(100) and Si(110) surfaces created by SPO as masks, two-dimensional (2D) nanostructures with high aspect ratio and a variety of patterns can be formed by anisotropic wet etching with KOH. By employing a mixture of KOH solutions and isopropyl alcohol (IPA) as an alternative to KOH alone, control of the morphology of the etched silicon surfaces, crucial for further fabrication, was greatly improved. The SPO and etching processes can be continually repeated on the 2D nanostructures, permitting the formation of various multilevel silicon-based nanostructures, including a T-gate structure useful for electronic circuitry. In addition, these multilevel silicon structures can be used as nanoimprint moulds for their rapid replication.
Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Bo Sun,Tielin Shi,Wenjun Sheng,Guanglan Liao

DOI: https://doi.org/10.1166/jnn.2013.7517

2013-01-01

Journal of Nanoscience and Nanotechnology

Abstract:We investigated the controlled fabrication of uniform vertical aligned silicon nanowires with desired length, diameter and location by combining nanosphere lithograph and metal assisted chemical etching techniques. The close-packed polystyrene nanospheres array was obtained by self-assemble technique, followed by reactive ion etching to acquire a non-close-packed monolayer template. Subsequently, the template was used to create a metal film with nanoholes array, which enable the controlled fabrication of ordered silicon nanowires via metal assisted chemical etching technique. By adjusting the monolayer of polystyrene nanospheres and the conditions for the metal assisted chemical etching, we obtained uniform distributed silicon nanowires with desired morphology. The aspect ratio of the silicon nanowires can reach to about 86:1. Furthermore, we have obtained the double-layer silicon nanowires by slight modifying the process. The influences of various conditions during etching were also discussed for improving the controlled fabrication.
Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching

Wendong Zhang,Xuge Fan,Shengbo Sang,Pengwei Li,Gang Li,Yongjiao Sun,Jie Hu

DOI: https://doi.org/10.1007/s11814-013-0180-y

IF: 2.7

2013-01-01

Korean Journal of Chemical Engineering

Abstract:We present a facile method to fabricate one-dimensional Si nanostructures based on Ag-induced selective etching of silicon wafers. To obtain evenly distributed Si nanowires (SiNWs), the fabrication parameters have been optimized. As a result, a maximum of average growth rate of 0.15 μm/min could be reached. Then, the fabricated samples were characterized by water contact angle (CA) experiments. As expected, the as-etched silicon samples exhibited a contact angle in the range of 132°–136.5°, whereas a higher contact angle (145°) could be obtained by chemical modification of the SiNWs with octadecyltrichlorosilane (OTS). Additionally, Raman spectra experiments have been carried out on as-prepared nanostructures, showing a typical decreasing from 520.9 cm −1 to 512.4 cm −1 and an asymmetric broadening, which might be associated with the phonon quantum confinement effect of Si nanostructures.
Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Xiaolei Wen,Lansheng Zhang,Feng Tian,Yang Xu,Huan Hu

DOI: https://doi.org/10.3390/nano12193269

2022-09-20

Abstract:Herein, we report a helium ion-bombardment enhanced etching method for silicon nanofabrication without the use of resists; furthermore, we demonstrate its unique advantages for straightforward fabrication on irregular surfaces and prototyping nano-electro-mechanical system devices, such as self-enclosed Si nanofluidic channels and mechanical nano-resonators. This method employs focused helium ions to selectively irradiate single-crystal Si to disrupt the crystal lattice and transform it into an amorphous phase that can be etched at a rate 200 times higher than that of the non-irradiated Si. Due to the unique raindrop shape of the interaction volumes between helium ions and Si, buried Si nanofluidic channels can be constructed using only one dosing step, followed by one step of conventional chemical etching. Moreover, suspended Si nanobeams can be fabricated without an additional undercut step for release owing to the unique raindrop shape. In addition, we demonstrate nanofabrication directly on 3D micro/nano surfaces, such as an atomic force microscopic probe, which is challenging for conventional nanofabrication due to the requirement of photoresist spin coating. Finally, this approach can also be extended to assist in the etching of other materials that are difficult to etch, such as silicon carbide (SiC).
Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Kexiang Hu,Qingkang Wang

DOI: https://doi.org/10.1166/jnn.2013.7129

2013-01-01

Journal of Nanoscience and Nanotechnology

Abstract:The direct modification of silicon, other semiconductors and metal surfaces by the process of local anodic oxidation via electric field from scanning probe microscope (SPM) in conjunction with the absorbed water in atmosphere as the electrolyte is a promising method for fabricating micro/nanostructures. We demonstrated that the process of SPM oxidation and anisotropic wet chemical etching is a low cost and reliable method to produce smooth and uniform etched structures on silicon substrates. Using silicon oxide nanopatterns produced on H-passivated (110) Si surfaces as etching masks, and due to the large (110)/(111) anisotropic ratio of etching rate and the large Si/SiO2 etching selectivity at a relatively low etching temperature and an optimal concentration of aqueous KOH etchant, high-aspect-ratio grating structures have been fabricated by anisotropic wet etching. The approach of combining scanning probe lithography (SPL) with etching technique provides an alternative lithography route to fabricate functional nanophotonic or nanoelectronic devices.
Fabrication of Silicon Nano-Wire by Oxidation

Xiaofei Wang,Yufei Zhang,Kan Yu,Xiaomei Yu

DOI: https://doi.org/10.4028/www.scientific.net/kem.483.565

2011-01-01

Key Engineering Materials

Abstract:In this paper, we report a method of fabricating silicon nano-wire based on thermal oxidation technique. In this method, we first fabricate a wider structure with traditional lithography, and then use a layer of silicon nitride as mask to oxidize silicon. At the same time, due to the lateral diffusion and oxidation of oxidant, silicon is consumed by oxidant and the width of the silicon structure will be reduced to nano range when we remove the silicon dioxide. The factors affecting the ratio of vertical and lateral oxidation, for example, the gentle slope caused by isotropic oxidation and the inhomogeneity of the sidewall of silicon nano-wire, are discussed at last. Our results should be useful in generating silicon–based nanospintronics devices with careful selection of the oxide parameters.
SCS nano-structures fabricated by hybrid process of HNA selective etching and oxidization

Andi Zhao,Xiaomei Yu,Xiaofei Wang,Wengang Wu

DOI: https://doi.org/10.1109/NMDC.2011.6155382

2011-01-01

Abstract:In this paper, we developed a hybrid process of fabricating single crystal silicon nanostructures by HNA selective etching followed by an oxidization with a common photolithography. HNA etch heavy and light doped silicon with the etching selectivity about 160:1. On the other hand, silicon will be consumed by an oxidization process. Based on these characteristics, we first fabricate some bigger structures with an optical lithography, and then processed the structures with heavy doping, diffusion, HNA etching, oxidization and BHF etching. At last, silicon nano-structures with the line width of ∼50nm were successfully fabricated. The results are almost catches up with the electron beam lithography, but with much low cost, time saving and reliability. The line width fabricated with this method can be further decreased by a precise controlling of the process parameters, include doping energy and concentration, annealing and oxidization time. © 2011 IEEE.
Fabrication of Ultra-Thin Silicon Nanowire Arrays Using Ion Beam Assisted Chemical Etching.

Zhiyuan Tan,Wenjia Shi,Chungang Guo,Quan Zhang,Liang Yang,Xiaoling Wu,Guo-an Cheng,Ruiting Zheng

DOI: https://doi.org/10.1039/c5nr02876k

IF: 6.7

2015-01-01

Nanoscale

Abstract:Uniform dispersion of Au-Ag alloy nanoparticles underneath the surface of a Si wafer is realized via Au film pre-deposition and Ag ion implantation. The Au-Ag nanoparticles are used as catalysts in metal assisted chemical etching for fabricating Si nanowire arrays with average diameters of less than 10 nm. We find that the alloy catalysts introduced by ion implantation are the key to obtaining thin nanowire arrays and we also demonstrate that SiNWAs with various diameters could be simply produced by changing the thickness of the pre-deposited Au layer. Compared with the traditional process, ion beam assisted chemical etching is proven to be a convenient and efficient approach to fabricate ultra-thin SiNWAs on a large scale.
An Etching Method for Fabricating Anisotropic Silicon Nanostructures with Vertical and Smooth Sidewalls

Feifei Yin,Yang Li,Wenjing Yue,Chunwei Zhang

DOI: https://doi.org/10.1166/nnl.2019.2910

2019-01-01

Nanoscience and Nanotechnology Letters

Abstract:Various nanostructures, such as nanopillars and nanoholes, have served as vital functional components for construction of high-performance electronic and photonic devices. Precise control of nanostructures morphology becomes particularly important. In this study, a facile anisotropic etching approach was proposed based on an inductively coupled plasma-reactive ion etching. The method was applied to realize silicon nanopillars and nanoholes with vertical and smooth trench profiles. Gas mixture of SF6 and C4F8 was adopted in the proposed etching process to enable simultaneous etching and passivation. To protect the trench profiles of silicon nanostructures from high-energy ion bombardment, a bias power source was applied. By properly altering the ratio of SF6 to C4F8, the silicon nanopillars and nanoholes demonstrated highly straight trench profiles. Notably, the smooth nanopillars with low damage were easily realized via the SF6/C4F8 etching step. However, nanoholes suffer from polymer redeposition, ascribed to failure in completely removing residual polymer coatings at the trench sidewalls. To realize nanoholes with smooth sidewalls, a Ar treatment step was introduced to remove residual polymer coatings by enabling an effective physical surface bombardment after the SF6/C4F8 chemical etching step. Through a comprehensive study on effect of Ar treatment on trench profiles of silicon nanoholes, we confirmed that the nanoholes featuring smooth trench profiles can be obtained by properly adjusting the Ar gas flow and treatment time.
Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

KQ Peng,JJ Hu,YJ Yan,Y Wu,H Fang,Y Xu,ST Lee,J Zhu

DOI: https://doi.org/10.1002/adfm.200500392

IF: 19

2005-01-01

Advanced Functional Materials

Abstract:A novel strategy for preparing large‐area, oriented silicon nanowire (SiNW) arrays on silicon substrates at near room temperature by localized chemical etching is presented. The strategy is based on metal‐induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution. The density and size of the as‐prepared SiNWs depend on the distribution of the patterned metal particles on the silicon surface. High‐density metal particles facilitate the formation of silicon nanowires. Well‐separated, straight nanoholes are dug along the Si block when metal particles are well dispersed with a large space between them. The etching technique is weakly dependent on the orientation and doping type of the silicon wafer. Therefore, SiNWs with desired axial crystallographic orientations and doping characteristics are readily obtained. Detailed scanning electron microscopy observations reveal the formation process of the silicon nanowires, and a reasonable mechanism is proposed on the basis of the electrochemistry of silicon and the experimental results.
Fabrication Techniques of Nano-Structure

卢刚,陈治明,王建农,葛惟昆

DOI: https://doi.org/10.3321/j.issn:0372-2112.2003.02.039

2003-01-01

Abstract:With the development of nano fabrication techniques,nano structure devices will be the basis of the next generation integrated circuits.We report process of Si quantum wire and dot based on EBL and RIE processes and process of nano structure metal gate based on EBL,electron beam evaporation and lift off techniques.Single electron transistors (SETs) on p type SIMOX substrates were also fabricated based on the processes.Coulomb blockade and single electron tunneling are observed in the SETs.
Wafer-Scale Fabrication of V-Shaped Silicon Nano-Slit Arrays

Qi Chen,Yifan Wang,Hualv Zhang,Zewen Liu

DOI: https://doi.org/10.1109/nems.2018.8557025

2018-01-01

Abstract:This paper presents a strategy of fabricating v-shaped nano-slit arrays in silicon substrates at wafer scale, by using a three-step wet anisotropic etching method, with the combination of a color-feedback mechanism. Through careful mask design, nano-slits with various aspect ratios and sizes were obtained. The minimum feature size of the obtained nano-slits was 6 nm, which holds great potential in biomolecule analyses such as DNA and protein detection. The size uniformity of the nano-slit array was carefully analyzed, and solutions to improve the size uniformity were proposed.
Fabrication and Electron Field Emission of Silicon Nanowires \\Synthesized by Chemical Etching

Cheng Guo-an

DOI: https://doi.org/10.3938/jkps.55.2681

2009-01-01

Journal of the Korean Physical Society

Abstract:Vertically aligned silicon nanowire arrays, which were synthesized by using a Ag catalyst deposited with magnetron sputtering and an electrochemical etching process were investigated. The thickness of the Ag catalyst affects the microstructure of aligned silicon nanowire array. Vertically aligned silicon nanowire arrays with more uniform morphology structures were synthesized with a catalyst thickness of 40 rim on a single crystal silicon wafer at room temperature. The electron field emission data showed a lower turn-on field for silicon nanowire arrays fabricated with the electrochemical etching process. The field enhancement; factor of the silicon nanowire arrays is as high as 1637. These data indicate that; electrochemical etching technology is a cheap and good method for fabricating vertically aligned silicon nanowire arrays for applications in field emission devices.
Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

Lin Liu,Kui-Qing Peng,Ya Hu,Xiao-Ling Wu,Shuit-Tong Lee

DOI: https://doi.org/10.1002/adma.201304327

IF: 29.4

2014-01-01

Advanced Materials

Abstract:Macroscopic galvanic cell-driven metal catalyzed electroless etching (MCEE) of silicon in aqueous hydrofluoric acid (HF) solution is devised to fabricate silicon nanowire (SiNW) arrays with dissolved oxygen acting as the one and only oxidizing agent. The key aspect of this strategy is the use of a graphite or other noble metal electrode that is electrically coupled with silicon substrate.
Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

Jian-Wei Ho,Qixun Wee,Jarrett Dumond,Li Zhang,Keyan Zang,Wee Kiong Choi,Andrew A. O. Tay,Soo-Jin Chua

DOI: https://doi.org/10.1557/opl.2012.1663

2012-01-01

Abstract:A combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4” silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.
Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density

Zhipeng Huang,Hui Fang,Jing Zhu

DOI: https://doi.org/10.1002/adma.200600892

IF: 29.4

2007-01-01

Advanced Materials

Abstract:A templated catalytic etching process has been developed to fabricate large-area arrays of silicon nanowires with controlled diameter, length, and density. The figure shows an example of an array constructed by this technique. Etched polystyrene spheres are used as templates to define the lateral dimensions of the array, whereas the length of the nanowires is defined by the duration of the etching process.

Fabrication Method of Silicon Nanostructures by Anisotropic Etching

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Silicon Nano-Wire Fabricated by Boe Silicon Etching

Lithography-free Fabrication of Silicon Nanowire and Nanohole Arrays by Metal-Assisted Chemical Etching

Fabrication of silicon-based multilevel nanostructures via scanning probe oxidation and anisotropic wet etching

Controlled Fabrication of Silicon Nanowires Via Nanosphere Lithograph and Metal Assisted Chemical Etching

Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching

Versatile Approach of Silicon Nanofabrication without Resists: Helium Ion-Bombardment Enhanced Etching

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Fabrication of Silicon Nano-Wire by Oxidation

SCS nano-structures fabricated by hybrid process of HNA selective etching and oxidization

Fabrication of Ultra-Thin Silicon Nanowire Arrays Using Ion Beam Assisted Chemical Etching.

An Etching Method for Fabricating Anisotropic Silicon Nanostructures with Vertical and Smooth Sidewalls

Fabrication of Single‐Crystalline Silicon Nanowires by Scratching a Silicon Surface with Catalytic Metal Particles

Fabrication Techniques of Nano-Structure

Wafer-Scale Fabrication of V-Shaped Silicon Nano-Slit Arrays

Fabrication and Electron Field Emission of Silicon Nanowires \\Synthesized by Chemical Etching

Fabrication of silicon nanowire arrays by macroscopic galvanic cell-driven metal catalyzed electroless etching in aerated HF solution.

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

Fabrication of Silicon Nanowire Arrays with Controlled Diameter, Length, and Density