Abstract:Nickel (Ni) induced crystallization of amorphous silicon (a-Si) has been studied by selective deposition of Ni on a-Si thin films. The a-Si under and near the Ni-covered regions was found to be crystallized after heat treatment at 500 °C from 1 to 90 h. Micro-Auger electron spectroscopy revealed that a large amount of Ni stayed in the region under the original Ni coverage, but no Ni was detected either in the crystallized region next to the Ni coverage or in the amorphous region beyond the front of the laterally crystallized Si. X-ray photoelectron spectroscopy revealed a nonuniform Ni distribution through the depth of the crystallized film under the original Ni coverage. In particular, a Ni concentration peak was found to exist at the interface of the crystallized Si and the buried oxide. It was found that a layer of 5-nm-thick Ni could effectively induce lateral crystallization of over 100 μm of a-Si, but the lateral crystallization rate was found to decrease upon extended heat treatment. Transmission electron microscopy analysis showed that the crystallized film under the Ni coverage was composed of randomly oriented fine grains, while that outside the Ni coverage was mainly composed of large (110)-oriented grains. A unified mechanism is proposed to explain the Ni induced crystallization of a-Si and possible reasons for the reduction in the lateral crystallization rate are discussed.

Influence of annealing time on crystallization of amorphous SI by SB

Nickel Induced Crystallization of Amorphous Silicon Thin Films

Study on solid-phase crystallization of B-doped a-Si:H film

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of microwave annealing on amorphous Si of carbon powder

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Rapid thermal annealing and crystallization mechanisms study of silicon nanocrystal in silicon carbide matrix

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Crystallization Behavior of Amorphous Si2bc3n Ceramic Monolith Subjected to High Pressure

The Effect Of Thermal Annealing On Crystallization In A-Si : H/Sio2 Multilayers By Using Layer By Layer Plasma Oxidation

Crystallization of Amorphous Si Film by Microwave Annealing with SiC Susceptors

Investigation of Sb diffusion in amorphous silicon

The Effect of Solution Treatment on the Si Particles’ Morphology Evolution and the Thermal Conductivity and Tensile Properties of Sb-Modified Al-8Si-0.6Mg Alloys

Crystallization of amorphous silicon thin films: The effect of rapid thermal processing pretreatment

Annealing effect on structures and luminescence of amorphous SiN films

Structural Relaxation of Amorphous Silicon Carbide Thin Films in Thermal Annealing

Surface effects on the crystallization kinetics of amorphous antimony