Abstract:The high-quality growth of GaAs crystals is extremely essential for the fabrication of high performance high frequency microwave electronic devices and light emitting devices. In this work, the molecular dynamics (MD) simulation was used to simulate the induced crystallization of GaAs crystal along the[110] orientation. The effects of strain on the growth process and defect formation have been analyzed by the largest standard cluster analysis, the pair distribution function and visualization analysis. The results indicate that the crystallization process of GaAs crystals changes significantly under different strain conditions. At the initial stage, the crystal growth rate of the system decreases after a certain tensile strain and a large compressive strain are applied, and the greater the strain, the lower the crystallization rate. In addition, as the crystal grows, the system forms a zigzag interface bounded by the {111} facet, and the angle between the growth plane and the {111} facet affects the morphology of the solid-liquid interface and further affects the formation of twins. The larger the applied tensile strain, the smaller the angle, the more twin defects will form and the more irregular they will be. At the same time, a large proportion of the dislocations in the system are associated with twins. The application of strain can either inhibit or promote the nucleation of dislocations, and the appropriate amount of strain size can even make crystals grow without dislocations. The study of the microstructural evolution of GaAs at the atomic scale provides a reference for the crystal growth theory.

Strain Field in Gaas/Gan Wafer-Bonding Interface and Its Microstructure

Observations of Interfaces in Direct Wafer-Bonded InP–GaAs Structures

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Electronic and Optical Properties of Strained Wurtzite Gan

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices

Strain and Microstructures of Gan Epilayers with Thick Ingan Interlayer Grown by Mocvd

Direct Measure of Strain and Electronic Structure in Gaas/Gap Core-Shell Nanowires

Effect of strain on space charge layer in GaN nanowires investigated by in-situ off-axis electron holography

Strain in Gan Epi-Layer Grown by Hydride Vapor Phase Epitaxy

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Molecular dynamics simulations of GaAs crystal growth under different strains

Effect Of The Thermal Stress On The Defect Evolution At Gaas/Si Wafer Bonding With A-Ge Intermediate Layer

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Determination Of Interface Structure And Atomic Arrangements For Strained Inas/Ga1-Xinxsb Superlattices By High-Resolution Transmission Electron Microscopy

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

In-plane Anisotropic Photoluminescence of C-plane GaN under Asymmetric Biaxial Strain

Fermi Level Effect on Strain of Si Doped Gan

Band Engineering in Strained Gan/Ultrathin Inn/Gan Quantum Wells

Electronic and Optical Properties of Unstrained and Strained Wurtzite Gan