Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

Determination Of Interface Structure And Atomic Arrangements For Strained Inas/Ga1-Xinxsb Superlattices By High-Resolution Transmission Electron Microscopy

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Electric fields and valence band offsets at strained [111] heterojunctions

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

The Interface Structure of InAs/GaInSb Strained-Layer Superlattice

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Atomic Intermixing and Segregation at the Interface of InAs/GaSb Type II Superlattices

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Evaluation of the in Concentration of an InxGa1−xSb Alloy Layer in Cross-Sectional HRTEM Images of III–V Semiconductor Superlattices

First-Principles Study of Interface Relaxation Effect on Interface and Electronic Structures of Inas/Gasb Superlattices with Different Interface Types

Interface Effect on Superlattice Quality and Optical Properties of InAs/GaSb Type-Ii Superlattices Grown by Molecular Beam Epitaxy

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

High resolution X-ray diffraction study in InAs/GaSb superlattice

A Strain Relief Mode at Interface of GaSb/GaAs Grown by Metalorganic Chemical Vapor Deposition

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Interface Design And Properties In Inas/Gasb Type-Ii Superlattices Grown By Molecular Beam Epitaxy

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

Atomic Structures of Two-Dimensional Strained Inas Epitaxial Layers on A Gaas(001) Surface: in Situ Observation of Quantum Dot Growth