Abstract:A systematic theoretical study of the electronic and optical properties of Ga$_{1-x}$In$_x$As self-assembled quantum-wires (QWR's) made of short-period superlattices (SPS) with strain-induced lateral ordering is presented. The theory is based on the effective bond-orbital model (EBOM) combined with a valence-force field (VFF) model. Valence-band anisotropy, band mixing, and effects due to local strain distribution at the atomistic level are all taken into account. Several structure models with varying degrees of alloy mixing for lateral modulation are considered. A valence force field model is used to find the equilibrium atomic positions in the QWR structure by minimizing the lattice energy. The strain tensor at each atomic (In or Ga) site is then obtained and included in the calculation of electronic states and optical properties. It is found that different local arrangement of atoms leads to very different strain distribution, which in turn alters the optical properties. In particular, we found that in model structures with thick capping layer the electron and hole are confined in the Ga-rich region and the optical anisotropy can be reversed due to the variation of lateral alloying mixing, while for model structures with thin capping layer the electron and hole are confined in the In-rich region, and the optical anisotropy is much less sensitive to the lateral alloy mixing.

Evaluation of the in Concentration of an InxGa1−xSb Alloy Layer in Cross-Sectional HRTEM Images of III–V Semiconductor Superlattices

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Interfacial Structure of InAs/Ga1−xInxSb Superlattices

Determination Of Interface Structure And Atomic Arrangements For Strained Inas/Ga1-Xinxsb Superlattices By High-Resolution Transmission Electron Microscopy

Studies on Inas/Gasb Superlattice Structural Properties by High Resolution X-Ray Diffraction

Atomic imaging and optical properties of InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattice

Characterization of InAs/GaSb Superlattices Grown by MOCVD with Atomic Resolution

XRD Reciprocal Space Mapping of InAsP/InGaAsP/InP Strain Epilayers

The Effect of Sb Content in InAs1-xSbx/GaSb Type-II Superlattices

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Structure and Electrical Properties of InAs/GaInSb Superlattice Film

X-Ray Diffraction Analysis of High Quality Inas/Gasb Type Ii Superlattices Grown by Mbe

Growth and Characterization of InAs 1-X Sb X with Different Sb Compositions on GaAs Substrates

Metal Organic Chemical Vapor Deposition Growth and Characterization of Inas/Gasb Type-Ii Superlattices on Gaas (001) Substrates

Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

Bond Lengths and Lattice Structure of InP0.52Sb0.48 Grown on GaAs

High resolution X-ray diffraction study in InAs/GaSb superlattice

Systematic study of Ga$_{1-x}$In$_x$As self-assembled quantum wires with different interfacial strain relaxation

Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs

Interface Effect on Superlattice Quality and Optical Properties of InAs/GaSb Type-Ii Superlattices Grown by Molecular Beam Epitaxy