Abstract:We present analytical models and experimental results to describe low-defect density growth (∼ 6 × 10 5 /cm 2 ) of highly mismatched antimonides on Si and GaAs substrates, with strain relief achieved at the growth interface through periodic, 90° interfacial misfit dislocations (IMF). We use molecular mechanics (MM) based modeling techniques to understand, at the atomic level, the spontaneous formation and energetics of these IMF. We have modeled, grown and characterized two systems extensively, these are - AlSb on Si with ∼ 13mismatch and GaSb on GaAs with 7.83lattice mismatch. Growth of these materials by molecular beam epitaxy (MBE) and subsequent High-Resolution Transmission Electron Microscopy (HR-TEM) has indicated that there is no tetragonal distortion in these two systems despite the high lattice mismatch. Instead, the mismatched epi-layers spontaneously form periodic IMF arrays that run along both [110] and [1-10] directions and relieve almost 100of the strain in a few monolayers of deposition. To model this form of strain relief, we use existing theories of strain relief adapted for very high strain conditions and we also use bond energetics to model the strain-relieving interface. The IMFs in these systems are periodic and so is the deviation in bond lengths and bond angles, which restricts our calculation space to a finite number of elements. We shall also demonstrate extensive growth and characterization results of the materials grown with a particular emphasis on the strain-relieving interface to show excellent agreement of the experimental data with the proposed models. The high quality and low-defect density in AlSb grown on Si, has helped us demonstrate optically pumped IR VCSELs and edge emitters monolithically on Si (001) and this data will also be presented.

A Strain Relief Mode at Interface of GaSb/GaAs Grown by Metalorganic Chemical Vapor Deposition

Strain Relief by Periodic Misfit Arrays for Low Defect Density Gasb on Gaas

Interfacial Misfit Array Formation For Gasb Growth On Gaas

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations.

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Different Strain Relief Behaviors in Al0.35ga0.65n/Gan Multiple Quantum Wells on Gan/Sapphire Templates with Aln/Gan Supperlattices and Low-Temperature Aln Interlayers

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Strain-Free Al0.08in0.018ga0.902n/Gan Heterostructure: Combined Rutherford Backscattering/Channeling and High Resolution X-Ray Diffraction

Epitaxial Growth and Formation of Interfacial Misfit Array for Tensile GaAs on GaSb

Strain Relaxation Induced by Interfacial Steps of GaAs/In0.2Ga0.8As Superlattices

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Atomic-Scale Observation of Unusual Dislocations in GaAs-GaAsSb Heterostructured Nanowires

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Investigation of the Anisotropic Strain Relaxation in Gasb Islands on Gap

Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Optimized Interfacial Management for InGaAs/GaAsP Strain-Compensated Superlattice Structure

Determination Of Interface Structure And Atomic Arrangements For Strained Inas/Ga1-Xinxsb Superlattices By High-Resolution Transmission Electron Microscopy

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering