Abstract:We present analytical models and experimental results to describe low-defect density growth (∼ 6 × 10 5 /cm 2 ) of highly mismatched antimonides on Si and GaAs substrates, with strain relief achieved at the growth interface through periodic, 90° interfacial misfit dislocations (IMF). We use molecular mechanics (MM) based modeling techniques to understand, at the atomic level, the spontaneous formation and energetics of these IMF. We have modeled, grown and characterized two systems extensively, these are - AlSb on Si with ∼ 13mismatch and GaSb on GaAs with 7.83lattice mismatch. Growth of these materials by molecular beam epitaxy (MBE) and subsequent High-Resolution Transmission Electron Microscopy (HR-TEM) has indicated that there is no tetragonal distortion in these two systems despite the high lattice mismatch. Instead, the mismatched epi-layers spontaneously form periodic IMF arrays that run along both [110] and [1-10] directions and relieve almost 100of the strain in a few monolayers of deposition. To model this form of strain relief, we use existing theories of strain relief adapted for very high strain conditions and we also use bond energetics to model the strain-relieving interface. The IMFs in these systems are periodic and so is the deviation in bond lengths and bond angles, which restricts our calculation space to a finite number of elements. We shall also demonstrate extensive growth and characterization results of the materials grown with a particular emphasis on the strain-relieving interface to show excellent agreement of the experimental data with the proposed models. The high quality and low-defect density in AlSb grown on Si, has helped us demonstrate optically pumped IR VCSELs and edge emitters monolithically on Si (001) and this data will also be presented.

Interfacial Misfit Array Formation For Gasb Growth On Gaas

Strain Relief by Periodic Misfit Arrays for Low Defect Density Gasb on Gaas

Epitaxial Growth and Formation of Interfacial Misfit Array for Tensile GaAs on GaSb

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations.

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: a Transmission Electron Microscopy Study.

A Strain Relief Mode at Interface of GaSb/GaAs Grown by Metalorganic Chemical Vapor Deposition

InxGa1-xSb/GaAs quantum well structures grown by molecular beam epitaxy

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Investigation of the Anisotropic Strain Relaxation in Gasb Islands on Gap

Growth Mode Dependence of Misfit Dislocation Configuration at Lattice Mismatched III-V Semiconductor Interfaces

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD Through Interfacial Misfit Dislocations Array

Effect of Antimony Ambience on the Interfacial Misfit Dislocations Array in A Gasb Epilayer Grown on A Gaas Substrate by Mocvd

Atomistic Modeling of Strain Distribution in Self-Assembled Interfacial Misfit Dislocation (IMF) Arrays in Highly Mismatched III–V Semiconductor Materials

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Effect of Strain on the Growth of InAs/GaSb Superlattices: An X-Ray Study

Simultaneous Interfacial Misfit Array Formation and Antiphase Domain Suppression on Miscut Silicon Substrate

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates

Occurrence of Cubic Gan and Strain Relaxation in Gan Buffer Layers Grown by Low-Pressure Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates

Surface Morphology of Highly Mismatched InSb Films Grown on GaAs Substrates by Molecular Beam Epitaxy