Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN
J. Moneta,M. Kryśko,J.Z. Domagala,E. Grzanka,G. Muziol,M. Siekacz,M. Leszczyński,J. Smalc-Koziorowska
DOI: https://doi.org/10.1016/j.actamat.2024.120082
IF: 9.4
2024-06-07
Acta Materialia
Abstract:In the epitaxy of semiconducting materials, substrate miscut is introduced to improve the morphology of deposited layers. However, in the mismatched epitaxial system, the substrate miscut also changes the stress geometry in the deposited layer, thus influencing the relaxation processes. In this paper, we show that InGaN layers grown on misoriented (0001)-GaN substrates relax by preferential activation of certain glide planes for misfit dislocation formation. Substrate misorientation changes resolved shear stresses, affecting the distribution of misfit dislocations within each dislocation set. We demonstrate that this mechanism leads to an anisotropic strain as well as a tilt of the InGaN layer with respect to the GaN substrate. It appears that these phenomena are more pronounced in structures grown on substrates misoriented toward 〈112 ̄0〉 direction than corresponding structures with 〈1 ̄100〉 misorientation. We reveal that the lattice of partially relaxed InGaN has a triclinic deformation, thus requiring advanced XRD analysis. The presentation of just a single asymmetric reciprocal space map commonly practiced in the literature can lead to misleading information regarding the relaxation state of partially relaxed wurtzite structures.
materials science, multidisciplinary,metallurgy & metallurgical engineering