Abstract:We present analytical models and experimental results to describe low-defect density growth (∼ 6 × 10 5 /cm 2 ) of highly mismatched antimonides on Si and GaAs substrates, with strain relief achieved at the growth interface through periodic, 90° interfacial misfit dislocations (IMF). We use molecular mechanics (MM) based modeling techniques to understand, at the atomic level, the spontaneous formation and energetics of these IMF. We have modeled, grown and characterized two systems extensively, these are - AlSb on Si with ∼ 13mismatch and GaSb on GaAs with 7.83lattice mismatch. Growth of these materials by molecular beam epitaxy (MBE) and subsequent High-Resolution Transmission Electron Microscopy (HR-TEM) has indicated that there is no tetragonal distortion in these two systems despite the high lattice mismatch. Instead, the mismatched epi-layers spontaneously form periodic IMF arrays that run along both [110] and [1-10] directions and relieve almost 100of the strain in a few monolayers of deposition. To model this form of strain relief, we use existing theories of strain relief adapted for very high strain conditions and we also use bond energetics to model the strain-relieving interface. The IMFs in these systems are periodic and so is the deviation in bond lengths and bond angles, which restricts our calculation space to a finite number of elements. We shall also demonstrate extensive growth and characterization results of the materials grown with a particular emphasis on the strain-relieving interface to show excellent agreement of the experimental data with the proposed models. The high quality and low-defect density in AlSb grown on Si, has helped us demonstrate optically pumped IR VCSELs and edge emitters monolithically on Si (001) and this data will also be presented.

Growth Mode Dependence of Misfit Dislocation Configuration at Lattice Mismatched III-V Semiconductor Interfaces

Contradictory increase of critical layer thickness in InxGa1−xSb/GaAs heterostructures grown by MBE

Interfacial Misfit Array Formation For Gasb Growth On Gaas

Influences of Misfit Strains on Liquid Phase Heteroepitaxial Growth

Growth Mode and Defect Evaluation of GaSb on GaAs Substrate: a Transmission Electron Microscopy Study.

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Modeling Misfit Dislocation Arrays for the Growth of Low-Defect Density AlSb on Si

Dislocation formation in the heteroepitaxial growth of PbSe/PbTe systems

The relationship between the dislocations and microstructure in In 0.82 Ga 0.18 As/InP heterostructures

Heteroepitaxial Growth of GaSb Interfacial Misfit Array on GaAs Substrate by Molecular Beam Epitaxy

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(001) heteroepitaxy

Distribution of Dislocations in GaSb and InSb Epilayers Grown on GaAs (001) Vicinal Substrates

The Relationship Between the Dislocations and Microstructure in In0.82Ga0.18As/InP Heterostructures

Molecular Dynamics Simulation of Interaction Between a 60°Dislocation and Vacancy Defects in Si Crystal

Use of misfit strain to remove dislocations from epitaxial thin films

Generation of Misfit Dislocations by Basal-Plane Slip in InGaN∕GaN Heterostructures

Epitaxial Growth and Formation of Interfacial Misfit Array for Tensile GaAs on GaSb

Origin of residual strain in heteroepitaxial films

High Hole Mobility of GaSb Relaxed Epilayer Grown on GaAs Substrate by MOCVD Through Interfacial Misfit Dislocations Array

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Orientation-dependent Strain and Dislocation in HVPE-grown Α -Ga2o3 Epilayers on Sapphire Substrates