Abstract:InxGa1-xAs/GaAs strained-layer structures containing four single quantum wells (SSQWs) were grown by molecular beam epitaxy on a (001) semi-insulating GaAs substrate with In contents of x = 0.09 and x = 0.16. The structures contained four InxGa1-xAs quantum wells with well width and growth sequence given by 20, 40, 80 and 160 angstrom and were separated by 500 angstrom GaAs layers. The optical and structural properties of the SSQW samples have been analysed by low-temperature cathodoluminescence (CL) and transmission electron microscopy. Misfit dislocations were observed in the sample with higher In content. Large-angle convergent-beam electron diffraction has been newly applied to this system as a reliable method for determining dislocation character. All misfit dislocations studied in plan-view specimens revealed dark line contrast in appropriately chosen monochromatic CL images irrespective of the dislocation character or its alpha or beta form. A simple one-to-one correlation between dislocations and dark lines was obtained. The very different well widths for InxGa1-xAs wells in the structures resulted in very different emission energies in CL experiments. It was therefore possible to deduce in which quantum well a particular dislocation segment lay by the energy of the monochromatic image which showed dark-line contrast. As a result, dislocations were traced stepping progressively from one well to another. It was also proved that most dislocations lay in the first-grown well although it was the narrowest. The implication of these results and potential applications of the experimental technique are discussed.

Generation of Misfit Dislocations by Basal-Plane Slip in InGaN∕GaN Heterostructures

Generation and Behavior of Pure-Edge Threading Misfit Dislocations in InxGa1−xN∕GaN Multiple Quantum Wells

The dissociation of (a+c) misfit dislocations at the InGaN/GaN interface

Minimum energy path for the nucleation of misfit dislocations in Ge/Si(001) heteroepitaxy

Dislocation Slip Behaviors in High-Quality Bulk GaN Investigated by Nanoindentation

Growth Mode Dependence of Misfit Dislocation Configuration at Lattice Mismatched III-V Semiconductor Interfaces

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Local Strain and Crystalline Defects in GaN/AlGaN/GaN(0001) Heterostructures Induced by Compositionally Graded AlGaN Buried Layers

Log-normal glide and the formation of misfit dislocation networks in heteroepitaxial ZnS on GaP

Dislocation Cross-Slip In Gan Single Crystals Under Nanoindentation

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Dislocation Analysis of InGaN/GaN Quantum Dots Grown by Metal Organic Chemical Vapor Deposition

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

The Study of Misfit Dislocations in Inxga1-Xas/Gaas Strained Quantum-Well Structures

Influence of GaN substrate miscut on the XRD quantification of plastic relaxation in InGaN

Interfacial Misfit Array Formation For Gasb Growth On Gaas

Equilibrium Critical Thickness for A Wurtzite Ingan/Gan Heterostructure

Dislocations formed under longitudinal stress field in epitaxial-lateral-overgrowth GaN

Anisotropic Strain Relaxation and High Quality AlGaN/GaN Heterostructures on Si (110) Substrates