Abstract:This report classifies emission inhomogeneities that manifest in InGaN quantum well blue light-emitting diodes grown by plasma-assisted molecular beam epitaxy on free-standing GaN substrates. By a combination of spatially resolved electroluminescence and cathodoluminescence measurements, atomic force microscopy, scanning electron microscopy and hot wet KOH etching, the identified inhomogeneities are found to fall in four categories. Labeled here as type I through IV, they are distinguishable by their size, density, energy, intensity, radiative and electronic characteristics and chemical etch pits which correlates them with dislocations. Type I exhibits a blueshift of about 120 meV for the InGaN quantum well emission attributed to a perturbation of the active region, which is related to indium droplets that form on the surface in the metal-rich InGaN growth condition. Specifically, we attribute the blueshift to a decreased growth rate of and indium incorporation in the InGaN quantum wells underneath the droplet which is postulated to be the result of reduced incorporated N species due to increased N$_{2}$ formation. The location of droplets are correlated with mixed type dislocations for type I defects. Types II through IV are due to screw dislocations, edge dislocations, and dislocation bunching, respectively, and form dark spots due to leakage current and nonradiative recombination.

Nano-indentation Study of Dislocation Evolution in GaN-based Laser Diodes

Dislocation evolution in GaN-based Laser Diodes under nano-indentation

Dislocation Evolution in Anisotropic Deformation of GaN under Nanoindentation

Dislocation luminescence in GaN single crystals under nanoindentation

Dislocation Cross-Slip In Gan Single Crystals Under Nanoindentation

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Dislocation Slip Behaviors in High-Quality Bulk GaN Investigated by Nanoindentation

Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Indenter radius effect on mechanical response of a-(11–20), c-(0001), and m-(-1100) plane GaN single crystals in nanoindentation: A molecular dynamics study

Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Molecular Dynamics Simulation on B3-GaN Thin Films under Nanoindentation.

Investigation of edge effect on wurtzite gallium nitride in nanoindentation using molecular dynamics simulation

Quality Improvement of GaN-based Blue-violet Laser Diode by Doping Indium

Inclined Dislocation Generation in Compressive-Strain-Enhanced Mg-Doped GaN/Al0.15Ga0.85N Superlattice with AlN Interlayer

Influence of Dislocations in the GaN Layer on the Electrical Properties of an AlGaN/GaN Heterostructure

Dislocation and Indium Droplet Related Emission Inhomogeneities in InGaN LEDs

Performance Improvement of InGaN-based Laser Grown on Si by Suppressing Point Defects.

The Mechanism of Plastic Deformation in Intact and Irradiated GaN During Indentation: A Molecular Dynamics Study

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates

Application of multiphoton photoluminescence in characterization of GaN dislocations