Abstract:Improving the mechanical strength of Czochralski (CZ) silicon is of significance for increasing the manufacturing yield of integrated circuits. In this work, we have comparatively investigated the dislocation gliding behaviors in the conventional CZ silicon, nitrogen (N)-doped CZ silicon, germanium (Ge)-doped CZ silicon as well as Ge and N co-doped CZ silicon subjected to the indentations for 30 min at different temperatures in the range of 850–1050 °C with an interval of 50 °C. It is found that the suppressing effect of N-doping on the dislocation gliding is strongest at 950 °C and becomes slightly weakened at higher temperatures, while Ge-doping does not exert a remarkable suppressing effect on the dislocation gliding until the temperature exceeds 950 °C. The co-doping of N and Ge impurities takes both advantages of N- and Ge-doping to suppress the dislocation gliding in CZ silicon at the aforementioned temperatures. More importantly, at 1000 and 1050 °C that are the typical processing temperatures for integrated circuits, the N and Ge co-doping exhibits a stronger suppressing effect on the dislocation gliding in CZ silicon than the single Ge- or N-doping. This indicates that the mechanical strength of CZ silicon in terms of the resistance of dislocation gliding at a high temperature can be further improved by co-doping Ge and N impurities. It is believed that the N-doping can result in the formation of larger grown-in oxygen precipitates and N–O complex-related pinning agents within the dislocations to suppress the dislocation gliding at 850–1050 °C with the strongest suppressing effect at 950 °C, while the suppressing effect of Ge-doping on the dislocation gliding at the temperatures exceeding 950 °C is tentatively ascribed to the formation of Ge–O complexes near the front of the dislocation lines.

Fermi Level Effect on Strain of Si Doped Gan

On the Strain in N-Type Gan

Study on Structure and Strain Property of GaN:Si Films

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Strain Effect on the Diffusion of Interstitial Mn in Gaas

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

Strain Induced Quantum Effect in Semiconductors

Different Strain Relaxation Mechanisms in Strained Si/Si1−xGex/Si Heterostructures by High Dose B+ and BF2+ Doping

Effect of Si Doping in Wells of AlGaN/GaN Superlattice on the Characteristics of Epitaxial Layer

Effect of Carbon Impurity on the Dislocation Climb in Epitaxial GaN on Si Substrates

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Theoretical studies of low strain n-type GaN co-doped by Si and Sn

Influence of Si Doping on Optical Characteristics of Cubic Gan Grown on (001) Gaas Substrates

Strain effects on the behavior of intrinsic point defects within the GaN/AlN interface

Strain Property Studies of GaN:Mg Films Grown by MOCVD

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering