Abstract:We use hybrid density functional calculations to assess n-type doping in monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys. We focus on Si, the most promising donor dopant, and study the structural properties, formation energies and charge-state transition levels of its various configurations. We also explore the impact of C and H, which are common impurities in metal-organic chemical vapor deposition (MOCVD). In Ga$_2$O$_3$, Si$_{Ga}$ is an effective shallow donor, but in Al$_2O_3$ Si$_{Al}$ acts as a DX center with a (+/-) transition level in the band gap. Interstitial H acts as a shallow donor in Ga$_2$O$_3$, but behaves as a compensating acceptor in n-type Al$_2O_3$. Interpolation indicates that Si is an effective donor in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ up to 70% Al, but it can be compensated by H already at 1% Al. We also assess the diffusivity of H and study complex formation. Si$_{cation}$-H complexes have relatively low binding energies. Substitutional C on a cation site acts as a shallow donor in Ga$_2$O$_3$, but can be stable in a negative charge state in (Al$_x$Ga$_{1-x}$)$_2$O$_3$ when x>5%. Substitutional C on an O site (C$_O$) always acts as an acceptor in n-type (Al$_x$Ga$_{1-x}$)$_2$O$_3$, but will incorporate only under relatively O-poor conditions. C$_O$-H complexes can actually incorporate more easily, explaining observations of C-related compensation in Ga$_2$O$_3$ grown by MOCVD. We also investigate C$_{cation}$-H complexes, finding they have high binding energies and act as compensating acceptors when x>56%; otherwise the H just passivates the unintentional C donors. C-H complex formation explains why MOCVD grown Ga$_2$O$_3$ can exhibit record-low free-carrier concentrations, in spite of the unavoidable incorporation of C. Our study highlights that, while Si is a suitable shallow donor in ALGO alloys, control of unintentional impurities is essential to avoid compensation.

Theoretical studies of low strain n-type GaN co-doped by Si and Sn

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

Comparative analysis of structure and electronic properties of doped g-GaN/Al0.5Ga0.5N heterostructure

First Principles Study of P-Type Doping in SiC Nanowires: Role of Quantum Effect

Silicon Doping Dependence of n-Type Al0.5Ga0.5 N Layers Grown by Metalorganic Chemical Vapor Deposition.

Fermi Level Effect on Strain of Si Doped Gan

Effect of Tin on Point Defects and Oxygen Precipitation in Czochralski Silicon: Experimental and Theoretical Studies

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Carrier transport and luminescence properties of n-type GaN

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Threading dislocation and lattice stress modulation of Si based GaN material with AlPN nucleation layer

Critical Role of Dopant Bond Strength in Enhancing the Conductivity of N-Type Doped Κ-Ga2o3

Role of carbon and hydrogen in limiting $n$-type doping of monoclinic (Al$_x$Ga$_{1-x}$)$_2$O$_3$

Improvement of Doping Efficiency in Mg-Al0.14Ga0.86N/GaN Superlattices with AlN Interlayer by Suppressing Donor-Like Defects

On compensation in Si-doped AlN

On the Strain in N-Type Gan

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire