Abstract:Si-doped GaN films were grown epitaxially on c-sapphire by rf magnetron reactive co-sputtering of GaAs and Si at various partial pressures of N2 in Ar–N2 growth atmosphere. Energy dispersive x-ray spectroscopy revealed ∼2 at.% Si in all the films, but the N/Ga ratio decreased substantially as N2 percentage was reduced from 100% to 10%. The lattice parameters (a and c) were obtained independently to determine the in-plane and out-of-plane components of strain in films, which were analyzed to deduce the hydrostatic and biaxial strain contributions. High resolution x-ray diffraction revealed the dominant presence of edge dislocations (∼1012 cm−2) in the films grown at 30%–100% N2, which decreases and becomes comparable to the density of screw dislocations (∼1011 cm−2) at lower N2 percentages. The films grown at 75%–100% N2 displayed compressive biaxial stress along with large hydrostatic strain and micro-strain due to the incorporation of nitrogen at interstitial locations and grain boundaries. Both hydrostatic strain and micro-strain decrease in the films grown below 75% N2, in which, a reversal of biaxial stress to tensile is seen due to the prevalence of in-plane tensile stress generated during coalescence. The decrease of tensile stress in films grown below 30% N2, accompanied by increase in micro-strain and hydrostatic strain are ascribed to Ar incorporation and voided morphology. The presence of Si does not have a significant influence on residual stress of films and appears to be masked by the dominant growth-related intrinsic effects.

Study on Structure and Strain Property of GaN:Si Films

Stress, Structural and Electrical Properties of Si-doped GaN Film Grown by MOCVD

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Strain Status in Fe- and Si- Doped GaN Epilayers Grown on Sapphire

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Fermi Level Effect on Strain of Si Doped Gan

Microstructure and Strain Analysis of GaN Epitaxial Films Using In-Plane Grazing Incidence X-Ray Diffraction

Temperature-dependent electrical and optical studies on nonpolar a-plane GaN thin films with various Si-doping levels

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Study of residual stress in reactively sputtered epitaxial Si-doped GaN films

Influence of Ga Concentration in Si Substrates on the Quality of GaN Films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Determine the structure and strain of GaN/Si epilayer by synchrotron radiation X-ray diffraction

Strain analysis on Al_xGa_(1-x)N/GaN by high resolution XRD

Effects of Al Doping on Dislocation Inclinations and Strain of GaN Films on Si Substrates

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Microstrain in Al0.22Ga0.78N/GaN heterostructure studied by X-ray diffraction and scattering

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films

Structural and Electrical Characterizations of Si-implanted GaN with a High Dose at Elevated Temperatures

Effects of Doping on the Crystalline Quality and Composition Distribution in Ingan/Gan Structure Grown by Mocvd