Abstract:β-Ga2O3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of β-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated techniques for growing high-quality crystalline films. It also provides a platform for studying the effects of doping and defects in heteroepitaxial β-Ga2O3. In our study, we tackled the issue of Si source passivation during the MBE growth of Si-doped β-Ga2O3. We did this by using an electron beam vaporize module, a departure from the traditional Si effusion cell. Our research extensively explores the correlation between Si doping concentration and film properties. These properties include microstructure, morphology, defects, carrier conductivity, and mobility. The results from these investigations are mutually supportive and indicate that a high density of defects in heteroepitaxial β-Ga2O3 is the primary reason for the challenges in controllable doping and conductivity. These insights are valuable for the ongoing development and enhancement of β-Ga2O3-based device techniques.

Effects of Doping on the Crystalline Quality and Composition Distribution in Ingan/Gan Structure Grown by Mocvd

Effects of Indium Surfactant on the Crystalline and Optical Properties of GaN During Initial Growth Stage

Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping

Influence of High Mg Doping on the Microstructural and Opto-Electrical Properties of AlGaN Alloys

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

Effects of Edge Dislocations and Intentional Si Doping on the Electron Mobility of N-Type Gan Films

Study on Mg-doped AlGaN Films Grown by Metal Organic Chemical Vapor Deposition

Properties of Mg-Doped AlGaN Films

Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films

Growth and doping characteristics of InGaN films grown by low pressure MOCVD

Improving the quality and properties of GaInSb crystal with Al doping

Influence of Mg source flowrate on the properties of isoelectronic in-doping p-AlGaN materials

Microstructural Properties of Over-Doped Gan-Based Diluted Magnetic Semiconductors Grown by Mocvd

Unintentional Doping Effect in Si-doped MOCVD Β-Ga2o3 Films: Shallow Donor States

Influence of Mn-doping on Densities of Screw- and Edge-Type Threading Dislocations in Ga1−xMnxN Grown by Metal Organic Chemical Vapor Deposition

Effect of Phosphorus Doping on the Structural Properties in Nc-Si:H Thin Films

Optimization and Analysis of Magnesium Doping in MOCVD Grown p-GaN

P-Type Doping Of Gan By Mg+ Implantation

Effects of Mg-doping Temperature on the Structural and Electrical Properties of Nonpolar A-Plane P-Type GaN Films

Study of InGaN Films Grown by MOCVD