Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Multilayered Metal Capping Barrier Including Cusin, for Sub-65-Nm Technology Nodes

Improvement of interfacial adhesion strength and thermal stability of cu/cap barrier/low-k dielectric stack by plasma treatment on the surface of Cu film

Ultrathin Cusin/P-Sic:H Bilayer Capping Barrier for Cu/Ultralow-K Dielectric Integration

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Recent Advances in Barrier Layer of Cu Interconnects

Failure Mechanism of 5 Nm Thick Ta–Si–C Barrier Layers Against Cu Penetration at 750–800°C

Organosiloxane nanolayer as diffusion barrier for Cu metallization on Si

Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Sub-Micron Electrical Interconnection Enabled Ultra-High I/O Density Wafer Level SiP Integration

CVD-Mn/CVD-Ru-based barrier/liner solution for advanced BEOL Cu/Low-k interconnects

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Study of A Single Layer Ultrathin Como Film As A Direct Plateable Adhesion/Barrier Layer for Next Generation Interconnect

Enhanced Cu-Cu bonding for ultrahigh-density interconnection: Co passivation bonding with non-oxidation interfaces

Ultrathin W-Si-N as diffusion barrier layer between Cu and Si

Electroless Plating Ni-based Barrier Layers for 3D Interconnection

Improved Barrier Properties of Ultrathin Ru Film with Tan Interlayer for Copper Metallization

A Novel Barrier to Copper Metallization by Implanting Nitrogen into SiO2

Ultrathin Ru–Ta–C Barriers for Cu Metallization

Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

Two-Dimensional h-BN and MoS2 as Diffusion Barriers for Ultra-Scaled Copper Interconnects