Abstract:The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

Hot-wire chemical-vapor-deposited nanometer range a-SiC:H diffusion barrier films for ultralarge-scale-integrated application

Ultrathin Cusin/P-Sic:H Bilayer Capping Barrier for Cu/Ultralow-K Dielectric Integration

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Multilayered Metal Capping Barrier Including Cusin, for Sub-65-Nm Technology Nodes

Ultrathin W-Si-N as diffusion barrier layer between Cu and Si

Effect Of N-Doping On The Microstructure And Properties Of Amorphous Sic:H Diffusion Barrier Films

Application of Zr-Si Film As Diffusion Barrier in Cu Metallization

Failure Mechanism of 5 Nm Thick Ta–Si–C Barrier Layers Against Cu Penetration at 750–800°C

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Organosiloxane nanolayer as diffusion barrier for Cu metallization on Si

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Diffusion Barrier Properties of AlMoNbSiTaTiVZr High-Entropy Alloy Layer Between Copper and Silicon

High temperature stability of Zr-Si-N diffusion barrier in Cu/Si contact system

Reliability Studies of Barrier Layers for Cu/PAE Low-K Interconnects.

Improvement of interfacial adhesion strength and thermal stability of cu/cap barrier/low-k dielectric stack by plasma treatment on the surface of Cu film

5 - Nm -Thick TaSiC Amorphous Films Stable Up to 750°C As a Diffusion Barrier for Copper Metallization

Ultrathin Zrbxoy Films As Diffusion Barriers in Cu Interconnects

Recent Advances in Barrier Layer of Cu Interconnects

Ultrathin Diffusion Barrier for Copper Metallization: A Thermally Stable Amorphous Rare-Earth Scandate

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Tungsten Carbides As a Diffusion Barrier for Cu Metallization