Gate-Controlled LVTSCR for High-Voltage ESD Protections in Advanced CMOS Processes
Ruibo Chen,Hongxia Liu,Cong Yan,Feibo Du,Aoran Han,Yuxin Zhang,Wei Huang,Qi Xiang,Tianzhi Gao,Hao Wei,Zhiwei Liu
DOI: https://doi.org/10.1109/ted.2023.3244765
IF: 3.1
2023-03-29
IEEE Transactions on Electron Devices
Abstract:In this article, a novel high robust and latch-up immune electrostatic discharge (ESD) protection device, called gate-controlled low-voltage-triggered silicon-controlled rectifier (GC-LVTSCR), is proposed for 5-V I/O protection applications in the advance 40-nm CMOS technology. By incorporating a surface current diverting path with a controlling poly-silicon gate (CG) into the conventional LVTSCR, the GC-LVTSCR's ESD characteristics can be improved and modulated with two bias conditions of CG. The first improved GC-LVTSCR structure named gate-to-body SCR (GBSCR) with the CG tied to the PWell's body is expected to realize higher holding voltage ( and lower trigger voltage ( , while the other structure named gate-to-drain SCR (GDSCR) using the CG connected to the bridging p+ region of LVTSCR is designed to gain even higher . Measurement results show that the GBSCR has 11% lowered , 38% enhanced , and improved charged device model (CDM) characteristics by comparing with the traditional LVTSCR, and the GDSCR possesses a further improved with 45% higher than the GBSCR. Besides, the new d- vices are expected to protect 5 V or above I/O in submicrometer technologies and have been realized in a 0.18- BCD process.
engineering, electrical & electronic,physics, applied